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16 results on '"Delerue, Christophe"'

1. Characterization of the Edge States in Colloidal Bi2Se3 Platelets

Author

Moes, Jesper R., primary, Vliem, Jara F., additional, de Melo, Pedro M. M. C., additional, Wigmans, Thomas C., additional, Botello-Méndez, Andrés R., additional, Mendes, Rafael G., additional, van Brenk, Ella F., additional, Swart, Ingmar, additional, Maisel Licerán, Lucas, additional, Stoof, Henk T. C., additional, Delerue, Christophe, additional, Zanolli, Zeila, additional, and Vanmaekelbergh, Daniel, additional

Published
2024
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4. Bias Tunable Spectral Response of Nanocrystal Array in a Plasmonic Cavity

Author

Dang, Tung Huu, primary, Vasanelli, Angela, additional, Todorov, Yanko, additional, Sirtori, Carlo, additional, Prado, Yoann, additional, Chu, Audrey, additional, Gréboval, Charlie, additional, Khalili, Adrien, additional, Cruguel, Herve, additional, Delerue, Christophe, additional, Vincent, Gregory, additional, and Lhuillier, Emmanuel, additional

Published
2021
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5. Correlating Structure and Detection Properties in HgTe Nanocrystal Films

Author

Chee, Sang-Soo, primary, Gréboval, Charlie, additional, Magalhaes, Debora Vale, additional, Ramade, Julien, additional, Chu, Audrey, additional, Qu, Junling, additional, Rastogi, Prachi, additional, Khalili, Adrien, additional, Dang, Tung Huu, additional, Dabard, Corentin, additional, Prado, Yoann, additional, Patriarche, Gilles, additional, Chaste, Julien, additional, Rosticher, Michael, additional, Bals, Sara, additional, Delerue, Christophe, additional, and Lhuillier, Emmanuel, additional

Published
2021
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6. Van Hove Singularities and Trap States in Two-Dimensional CdSe Nanoplatelets

Author

Peric, Nemanja, primary, Lambert, Yannick, additional, Singh, Shalini, additional, Khan, Ali Hossain, additional, Franchina Vergel, Nathali Alexandra, additional, Deresmes, Dominique, additional, Berthe, Maxime, additional, Hens, Zeger, additional, Moreels, Iwan, additional, Delerue, Christophe, additional, Grandidier, Bruno, additional, and Biadala, Louis, additional

Published
2021
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7. Engineering a Robust Flat Band in III–V Semiconductor Heterostructures

Author

Franchina Vergel, Nathali A., primary, Post, L. Christiaan, additional, Sciacca, Davide, additional, Berthe, Maxime, additional, Vaurette, François, additional, Lambert, Yannick, additional, Yarekha, Dmitri, additional, Troadec, David, additional, Coinon, Christophe, additional, Fleury, Guillaume, additional, Patriarche, Gilles, additional, Xu, Tao, additional, Desplanque, Ludovic, additional, Wallart, Xavier, additional, Vanmaekelbergh, Daniel, additional, Delerue, Christophe, additional, and Grandidier, Bruno, additional

Published
2020
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8. Engineering a Robust Flat Band in III–V Semiconductor Heterostructures.

Author

Franchina Vergel, Nathali A., Post, L. Christiaan, Sciacca, Davide, Berthe, Maxime, Vaurette, François, Lambert, Yannick, Yarekha, Dmitri, Troadec, David, Coinon, Christophe, Fleury, Guillaume, Patriarche, Gilles, Xu, Tao, Desplanque, Ludovic, Wallart, Xavier, Vanmaekelbergh, Daniel, Delerue, Christophe, and Grandidier, Bruno

Published
2021
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10. Nanoscale Carrier Multiplication Mapping in a Si Diode

Author

Durand, Corentin, primary, Capiod, Pierre, additional, Berthe, Maxime, additional, Nys, Jean Philippe, additional, Krzeminski, Christophe, additional, Stiévenard, Didier, additional, Delerue, Christophe, additional, and Grandidier, Bruno, additional

Published
2014
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15. Effects of Strain on theCarrier Mobility in SiliconNanowires.

Author

Niquet, Yann-Michel, Delerue, Christophe, and Krzeminski, Christophe

Subjects
*SILICON nanowires, *ELECTRON mobility, *CHEMICAL reduction, *ELECTRON transport, *STRAINS & stresses (Mechanics), *TRANSPORT theory
Abstract

We investigate electron and hole mobilities in strainedsiliconnanowires (Si NWs) within an atomistic tight-binding framework. Weshow that the carrier mobilities in Si NWs are very responsive tostrain and can be enhanced or reduced by a factor >2 (up to 5×)for moderate strains in the ±2% range. The effects of strainon the transport properties are, however, very dependent on the orientationof the nanowires. Stretched ⟨100⟩ Si NWs are found tobe the best compromise for the transport of both electrons and holesin ≈10 nm diameter Si NWs. Our results demonstrate that strainengineering can be used as a very efficient booster for NW technologiesand that due care must be given to process-induced strains in NW devicesto achieve reproducible performances. [ABSTRACT FROM AUTHOR]

Published
2012
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16. Characterization of the Edge States in Colloidal Bi 2 Se 3 Platelets.

Author

Moes JR, Vliem JF, de Melo PMMC, Wigmans TC, Botello-Méndez AR, Mendes RG, van Brenk EF, Swart I, Maisel Licerán L, Stoof HTC, Delerue C, Zanolli Z, and Vanmaekelbergh D

Abstract

The remarkable development of colloidal nanocrystals with controlled dimensions and surface chemistry has resulted in vast optoelectronic applications. But can they also form a platform for quantum materials, in which electronic coherence is key? Here, we use colloidal, two-dimensional Bi 2 Se 3 crystals, with precise and uniform thickness and finite lateral dimensions in the 100 nm range, to study the evolution of a topological insulator from three to two dimensions. For a thickness of 4-6 quintuple layers, scanning tunneling spectroscopy shows an 8 nm wide, nonscattering state encircling the platelet. We discuss the nature of this edge state with a low-energy continuum model and ab initio GW-Tight Binding theory. Our results also provide an indication of the maximum density of such states on a device.

Published
2024
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