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Here, a magnetic model with an unprecedentedly large number of parameters was determined from first-principles calculations for transition-metal phosphorus trisulfides (TMPS$_3$'s), which reproduced the measured magnetic ground states of bulk TMPS$_3$'s. Our Monte Carlo simulations for the critical temperature, magnetic susceptibility, and specific heat of bulk and few-layer TMPS$_3$'s agree well with available experimental data and show that the antiferromagnetic order of FePS$_3$ and NiPS$_3$ persists down to monolayers. Remarkably, the orbital polarization, which was neglected in recent first-principles studies, dramatically enhances the magnetic anisotropy of FePS$_3$ by almost two orders of magnitude. A recent Raman study [K. Kim et al., Nat. Commun. 10, 345 (2019)] claimed that magnetic ordering is absent in monolayer NiPS$_3$ but simultaneously reported a strong two-magnon continuum; we show that the criterion used to judge magnetic ordering there is invalid in monolayer NiPS$_3$, thus providing an understanding of the two seemingly contradictory experimental results. The rich predictions on the magnetic susceptibility and specific heat of few-layer FePS$_3$ and NiPS$_3$ await immediate experimental verifications., This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, American Chemical Society after peer review. To access the final edited and published work see https://pubs.acs.org/articlesonrequest/AOR-3TCU3CMMVGHMTTRIVWYS

Graphene, as a semimetal with the largest known thermal conductivity, is an ideal system to study the interplay between electronic and lattice contributions to thermal transport. While the total electrical and thermal conductivity have been extensively investigated, a detailed first-principles study of its electronic thermal conductivity is still missing. Here, we first characterize the electron-phonon intrinsic contribution to the electronic thermal resistivity of graphene as a function of doping using electronic and phonon dispersions and electron-phonon couplings calculated from first principles at the level of density-functional theory and many-body perturbation theory (GW). Then, we include extrinsic electron-impurity scattering using low-temperature experimental estimates. Under these conditions, we find that the in-plane electronic thermal conductivity of doped graphene is ~300 W/mK at room temperature, independently of doping. This result is much larger than expected, and comparable to the total thermal conductivity of typical metals, contributing ~10 % to the total thermal conductivity of bulk graphene. Notably, in samples whose physical or domain sizes are of the order of few micrometers or smaller, the relative contribution coming from the electronic thermal conductivity is more important than in the bulk limit, since lattice thermal conductivity is much more sensitive to sample or grain size at these scales. Last, when electron-impurity scattering effects are included, we find that the electronic thermal conductivity is reduced by 30 to 70 %. We also find that the Wiedemann-Franz law is broadly satisfied at low and high temperatures, but with the largest deviations of 20-50 % around room temperature., 5 pages 6 figures

We present a first-principles study of the temperature- and density-dependent intrinsic electrical resistivity of graphene. We use density-functional theory and density-functional perturbation theory together with very accurate Wannier interpolations to compute all electronic and vibrational properties and electron-phonon coupling matrix elements; the phonon-limited resistivity is then calculated within a Boltzmann-transport approach. An effective tight-binding model, validated against first-principles results, is also used to study the role of electron-electron interactions at the level of many-body perturbation theory. The results found are in excellent agreement with recent experimental data on graphene samples at high carrier densities and elucidate the role of the different phonon modes in limiting electron mobility. Moreover, we find that the resistivity arising from scattering with transverse acoustic phonons is 2.5 times higher than that from longitudinal acoustic phonons. Last, high-energy, optical, and zone-boundary phonons contribute as much as acoustic phonons to the intrinsic electrical resistivity even at room temperature and become dominant at higher temperatures., 7 pages 5 figures

Magnetism in two-dimensional materials is not only of fundamental scientific interest but also a promising candidate for numerous applications. However, studies so far, especially the experimental ones, have been mostly limited to the magnetism arising from defects, vacancies, edges, or chemical dopants which are all extrinsic effects. Here, we report on the observation of intrinsic antiferromagnetic ordering in the two-dimensional limit. By monitoring the Raman peaks that arise from zone folding due to antiferromagnetic ordering at the transition temperature, we demonstrate that FePS

We investigate the effect of periodic potentials on the electronic structure of bilayer graphene and show that there is a critical value of the external potential below which new Dirac fermions are generated in the low-energy band structure, and above which a band gap is opened in the system. Our results, obtained from a self-consistent tight-binding calculation, can be simply explained by a two-band continuum model as a consequence of the pseudospin physics in graphene. The findings are robust against changes in the form of the potential, as well as bias voltages between the layers.

Analysis of the electronic structure of an ordinary two-dimensional electron gas (2DEG) under an appropriate external periodic potential of hexagonal symmetry reveals that massless Dirac fermions are generated near the corners of the supercell Brillouin zone. The required potential parameters are found to be achievable under or close to laboratory conditions. Moreover, the group velocity is tunable by changing either the effective mass of the 2DEG or the lattice parameter of the external potential, and it is insensitive to the potential amplitude. The finding should provide a new class of systems other than graphene for investigating and exploiting massless Dirac fermions using 2DEGs in semiconductors., 5 pages, 4 figures, significant revision of abstract, text, and figures

A first-principles investigation of the electronic properties of boron nitride nanoribbons (BNNRs) having either armchair or zigzag shaped edges passivated by hydrogen with widths up to 10 nm is presented. Band gaps of armchair BNNRs exhibit family-dependent oscillations as the width increases and, for ribbons wider than 3 nm, converge to a constant value that is 0.02 eV smaller than the bulk band gap of a boron nitride sheet owing to the existence of very weak edge states. The band gap of zigzag BNNRs monotonically decreases and converges to a gap that is 0.7 eV smaller than the bulk gap due to the presence of strong edge states. When a transverse electric field is applied, the band gaps of armchair BNNRs decrease monotonically with the field strength. For the zigzag BNNRs, however, the band gaps and the carrier effective masses either increase or decrease depending on the direction and the strength of the field., Comment: 5 pages, 5 figures