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We investigate heterostructures composed of monolayer WSe 2 stacked on α-RuCl 3 using a combination of Terahertz (THz) and infrared (IR) nanospectroscopy and imaging, scanning tunneling spectroscopy (STS), and photoluminescence (PL). Our observations reveal itinerant carriers in the heterostructure prompted by charge transfer across the WSe 2 /α-RuCl 3 interface. Local STS measurements show the Fermi level is shifted to the valence band edge of WSe 2 which is consistent with p-type doping and verified by density functional theory (DFT) calculations. We observe prominent resonances in near-IR nano-optical and PL spectra, which are associated with the A-exciton of WSe 2 . We identify a concomitant, near total, quenching of the A-exciton resonance in the WSe 2 /α-RuCl 3 heterostructure. Our nano-optical measurements show that the charge-transfer doping vanishes while excitonic resonances exhibit near-total recovery in "nanobubbles", where WSe 2 and α-RuCl 3 are separated by nanometer distances. Our broadband nanoinfrared inquiry elucidates local electrodynamics of excitons and an electron-hole plasma in the WSe 2 /α-RuCl 3 system.

Two-dimensional (2D) materials-based photodetectors in the infrared range hold the key to enabling a wide range of optoelectronics applications including infrared imaging and optical communications. While there exist 2D materials with a narrow bandgap sensitive to infrared photons, a two-photon absorption (TPA) process can also enable infrared photodetection in well-established 2D materials with large bandgaps such as WSe 2 and MoS 2 . However, most of the TPA photodetectors suffer from low responsivity, preventing this method from being widely adopted for infrared photodetection. Herein, we experimentally demonstrate 2D materials-based TPA avalanche photodiodes achieving an ultrahigh responsivity. The WSe 2 /MoS 2 heterostructure absorbs infrared photons with an energy smaller than the material bandgaps via a low-efficiency TPA process. The significant avalanche effect with a gain of ∼1300 improves the responsivity, resulting in the record-high responsivity of 88 μA/W. We believe that this work paves the way toward building practical and high-efficiency 2D materials-based infrared photodetectors.

Monolayer MoS 2 , among many other transition metal dichalcogenides, holds great promise for future applications in nanoelectronics and optoelectronics due to its ultrathin nature, flexibility, sizable band gap, and unique spin-valley coupled physics. However, careful study of these properties at low temperature has been hindered by an inability to achieve low-temperature Ohmic contacts to monolayer MoS 2 , particularly at low carrier densities. In this work, we report a new contact scheme that utilizes cobalt (Co) with a monolayer of hexagonal boron nitride (h-BN) that has the following two functions: modifies the work function of Co and acts as a tunneling barrier. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kΩ.μm at a carrier density of 5.3 × 10 12 /cm 2 . This further allows us to observe Shubnikov-de Haas oscillations in monolayer MoS 2 at much lower carrier densities compared to previous work.

The bilayer graphene has attracted considerable attention for potential applications in future electronics and optoelectronics because of the feasibility to tune its band gap with a vertical displacement field to break the inversion symmetry. Surface chemical doping in bilayer graphene can induce an additional offset voltage to fundamentally affect the vertical displacement field and the band gap opening in bilayer graphene. In this study, we investigate the effect of chemical molecular doping on band gap opening in bilayer graphene devices with single or dual gate modulation. Chemical doping with benzyl viologen molecules modulates the displacement field to allow the opening of a transport band gap and the increase of the on/off ratio in the bilayer graphene transistors. Additionally, Fermi energy level in the opened gap can be rationally controlled by the amount of molecular doping to obtain bilayer graphene transistors with tunable Dirac points, which can be readily configured into functional devices, such as complementary inverters.

We report small hysteresis integrated circuits by introducing monolayer graphene for the electrodes and a single-walled carbon nanotube network for the channel. Small hysteresis of the device originates from a defect-free graphene surface, where hysteresis was modulated by oxidation. This uniquely combined nanocarbon material device with transparent and flexible properties shows remarkable device performance; subthreshold voltage of 220 mV decade(-1), operation voltage of less than 5 V, on/off ratio of approximately 10(4), mobility of 81 cm(2) V(-1) s(-1), transparency of 83.8% including substrate, no significant transconductance changes in 1000 times of bending test, and only 36% resistance decrease at a tensile strain of 50%. Furthermore, because of the nearly Ohmic contact nature between the graphene and carbon nanotubes, this device demonstrated a contact resistance 100 times lower and a mobility 20 times higher, when compared to an Au electrode.