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Electrical detection of topological magnetic textures such as skyrmions is currently limited to conducting materials. Although magnetic insulators offer key advantages for skyrmion technologies with high speed and low loss, they have not yet been explored electrically. Here, we report a prominent topological Hall effect in Pt/Tm3Fe5O12bilayers, where the pristine Tm3Fe5O12epitaxial films down to 1.25 unit cell thickness allow for tuning of topological Hall stability over a broad range from 200 to 465 K through atomic-scale thickness control. Although Tm3Fe5O12is insulating, we demonstrate the detection of topological magnetic textures through a novel phenomenon: “spin-Hall topological Hall effect” (SH-THE), where the interfacial spin–orbit torques allow spin-Hall-effect generated spins in Pt to experience the unique topology of the underlying skyrmions in Tm3Fe5O12. This novel electrical detection phenomenon paves a new path for utilizing a large family of magnetic insulators in future skyrmion technologies.

Skyrmion imaging and electrical detection via topological Hall (TH) effect are two primary techniques for probing magnetic skyrmions, which hold promise for next-generation magnetic storage. However, these two kinds of complementary techniques have rarely been employed to investigate the same samples. We report the observation of nanoscale skyrmions in SrIrO3/SrRuO3(SIO/SRO) bilayers in a wide temperature range from 10 to 100 K. The SIO/SRO bilayers exhibit a remarkable TH effect, which is up to 200% larger than the anomalous Hall (AH) effect at 5 K, and zero-field TH effect at 90 K. Using variable-temperature, high-field magnetic force microscopy (MFM), we imaged skyrmions as small as 10 nm, which emerge in the same field ranges as the TH effect. These results reveal a rich space for skyrmion exploration and tunability in oxide heterostructures.