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3 results on '"Xue-Jin Li"'

1. Corrigendum to 'Sputtered and selenized Sb2Se3 thin-film solar cells with open-circuit voltage exceeding 500 mV' [Nano Energy 73 (2020) 104806]

Author

Zhenghua Su, Xianghua Zhang, Rong Tang, Xin-Sheng Liu, Ping Fan, Ying-Fen Li, Xue-Jin Li, Shuo Chen, Zhuanghao Zheng, Yan-Di Luo, Guangxing Liang, Xing-Ye Chen, Hongli Ma, and Yi-Ke Liu

Subjects
Materials science, Renewable Energy, Sustainability and the Environment, business.industry, Open-circuit voltage, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, Nano, Optoelectronics, General Materials Science, Thin film solar cell, Electrical and Electronic Engineering, 0210 nano-technology, business, Energy (signal processing)
Published
2020
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2. Sputtered and selenized Sb2Se3 thin-film solar cells with open-circuit voltage exceeding 500 mV

Author

Yi-Ke Liu, Xue-Jin Li, Shuo Chen, Zhuanghao Zheng, Rong Tang, Zhenghua Su, Xing-Ye Chen, Yan-Di Luo, Hongli Ma, Guangxing Liang, Xianghua Zhang, Ping Fan, Ying-Fen Li, Xin-Sheng Liu, Shenzhen University, The Chinese University of Hong Kong [Hong Kong], Henan Polytechnic University, Guizhou Institute of Technology, Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Natural Science Foundation of Guizhou ProvinceJCYJ20190808153409238Department of Education of Guangdong Province, DEGP 2018KZDXM059Natural Science Foundation of Guangdong Province 2020A1515010805ZDSYS 20170228105421966Shenzhen University, SZU PIDFP-ZR2019019National Natural Science Foundation of China, NSFC 61404086, U1804160, U1813207, 51802050Shenzhen University, SZU, Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)

Subjects
Materials science, 02 engineering and technology, Substrate (electronics), 010402 general chemistry, 01 natural sciences, 7. Clean energy, chemistry.chemical_compound, Sputtering, Photovoltaics, Selenide, [CHIM]Chemical Sciences, General Materials Science, Electrical and Electronic Engineering, Thin film, Sb2Se3 solar Cell, Renewable Energy, Sustainability and the Environment, Open-circuit voltage, business.industry, Selenization, Heterojunction, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Elemental inter-diffusion, 0104 chemical sciences, chemistry, Optoelectronics, 0210 nano-technology, business, Layer (electronics)
Abstract

International audience; Antimony selenide (Sb2Se3) is a potential absorber material for environment-friendly and cost-efficient photovoltaics and has achieved considerable progress in recent years. However, the severe open-circuit voltage (Voc) deficit ascribed to the interface and/or bulk defect states has become the main obstacle for further efficiency improvement. In this work, Sb2Se3 absorber layer was prepared by an effective combination reaction involving sputtered and selenized Sb precursor thin films. The self-assembled growth of Sb2Se3 thin films with large crystal grains, benign preferential orientation, and accurate chemical composition were successfully fulfilled under an appropriate thickness of Sb precursor and an optimized selenization scenario. Substrate structured Sb2Se3 thin-film solar cells, a champion device with a power-conversion efficiency of 6.84%, were fabricated. This device is comparable to state-of-the-art ones and represents the highest efficiency of sputtered Sb2Se3 solar cells. Importantly, the high Voc of 504 mV is closely related to the reduced deep level defect density for the Sb2Se3 absorber layer, the passivated interfacial defects for Sb2Se3/CdS heterojunction interface, and the additional heterojunction heat treatment-induced Cd and S inter-diffusion. This significantly improved Voc demonstrates remarkable potential to broaden its scope of applications for Sb2Se3 solar cells. © 2020 Elsevier Ltd

Published
2020
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3. Highly efficient and stable planar heterojunction solar cell based on sputtered and post-selenized Sb2Se3 thin film

Author

Xianghua Zhang, Jing Ting Luo, Rong Tang, Ping Fan, Guangxing Liang, Ya-Dong Wei, Zhuanghao Zheng, Xue-Jin Li, Zhenghua Su, Yong Qing Fu, Shenzhen University, Institut des Sciences Chimiques de Rennes (ISCR), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA), The Chinese University of Hong Kong [Hong Kong], University of Northumbria at Newcastle [United Kingdom], Department of Education of Guangdong Province 2018KZDXM059National Natural Science Foundation of China, NSFC 11574217, 61404086, U1813207Shenzhen Key Laboratory of Neuropsychiatric Modulation ZDSYS 20170228105421966, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
J500, Materials science, Passivation, H600, 02 engineering and technology, Planar heterojunction, 010402 general chemistry, 7. Clean energy, 01 natural sciences, Post-selenization, law.invention, law, Sputtering, Solar cell, [CHIM]Chemical Sciences, General Materials Science, Thin film, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, Renewable Energy, Sustainability and the Environment, Open-circuit voltage, business.industry, Energy conversion efficiency, Heterojunction, Sputter deposition, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Sb2Se3, Optoelectronics, 0210 nano-technology, business
Abstract

Antimony selenide (Sb2Se3) is regarded as one of the key alternative absorber materials for conventional thin film solar cells due to its excellent optical and electrical properties. Here, we proposed a Sb2Se3 thin film solar cell fabricated using a two-step process magnetron sputtering followed by a post-selenization treatment, which enabled us to optimize the best quality of both the Sb2Se3 thin film and the Sb2Se3/CdS heterojunction interface. By tuning the selenization parameters, a Sb2Se3 thin film solar cell with high efficiency of 6.06% was achieved, the highest reported power conversion efficiency of sputtered Sb2Se3 planar heterojunction solar cells. Moreover, our device presented an outstanding open circuit voltage (VOC) of 494 mV which is superior to those reported Sb2Se3 solar cells. State and density of defects showed that proper selenization temperature could effectively passivate deep defects for the films and thus improve the device performance.

Published
2019
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