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Ultraviolet photoconductivity in Copper doped ZnO (Cu:ZnO) thin films synthesized by sol-gel technique is investigated. Response characteristics of Pure ZnO thin film and Cu:ZnO thin film UV photodetector with 1.3 at. wt % Cu doping biased at 5 V for UV radiation of λ = 365 nm and intensity = 24 µwatt/cm2 has been studied. Cu:ZnO UV photodetector is found to exhibit a high photocoductive gain (K = 1.5×104) with fast recovery (T90% = 23s) in comparison to pure ZnO thin film based photodetector (K = 4.9×101 and T90% = 41s). Cu2+ ions have been substituted in ZnO lattice which has been confirmed by X-ray diffraction (XRD) and Raman spectroscopy leading to lowering of dark current (Ioff ∼ 1.44 nA). Upon UV illumination, more electron hole pairs are generated in the photodetector due to the high porosity and roughness of the surface of the film which favours adsorption of more oxygen on the surface of the photodetector. The photogenerated holes recombined with the trapped electrons, increasing the concentration of photogenerated electrons in the conduction band enhancing the photocurrent (Ion ∼ 0.02 mA) of the Cu:ZnO photodetector.

SnO2 based sensor structures prepared by rf magnetron sputtering technique have been studied for detecting H2 gas. Pd catalyst was integrated onto the SnO2 thin film in the form of clusters and nano-particles to obtain enhanced sensing response characteristics. The prepared sensor structures have been studied over a temperature range of 50-250°C for sensing response towards 500 ppm H2 gas. The sensor with Pd catalyst dispersed in the form of nanoparticles was found to exhibit an enhanced sensing response of 1.9×103 at a relatively low operating temperature of 150°C with a fast response time of 2 s and recovery time of 65 s towards 500 ppm H2 gas. The origin of enhanced sensing response is identified in the light of the enhanced spill over of H2 gas molecules on the uncovered surface of SnO2 thin film.

The effect of tungsten oxide (WO3) thin film thickness on the surface plasmon resonance (SPR) properties have been investigated. WO3 films of varying the thickness (36 nm, 60 nm, 80 nm, 100 nm, 150 nm and 200nm) have been deposited onto Au coated prism (Au/prism) by radio frequency (RF) magnetron sputtering technique. The SPR responses of bilayer films were fitted with the Fresnel’s equations in order to calculate the dielectric constant of WO3 thin film. The variation of complex dielectric constant and refractive index with the thickness of WO3 thin film was studied.

Methane is an important explosive gas, used extensively at the domestic and industrial sites. It is the main constituent of natural gas, which is the main fuel supplied to homes and industries including automobiles. Detection of trace level of methane gas is very important to avoid any accidental explosion due to its leakage and may cause loss of valuable human life and property. The present paper is focused on the development of new sensing material in the form of composites to improve sensitivity, selectivity and stability. Present work shows the enhanced response of SnO2-ZnO composite structures for methane sensing and further increases its sensing response by loading appropriate catalyst on the sensor surface keeping in view of Fermi energy control mechanism and spillover mechanism. A stable sensor response of 77-85 % was obtained for SnO2-ZnO-Pd sensor structure over a wider range of temperature (160-260oC).

The BiFeO3/BaTiO3 (BFO/BTO) multilayers were deposited on Pt/Ti/SiO2/Si substrates using sol-gel spin coating technique. The electric and magnetic studies on BFO/BTO multilayer structures were carried out for different number of layers. Enhancement in multiferroic properties were seen for all the prepared multilayers as compared to individual BTO and BFO thin films. Maximum value of ferroelectric polarization 71.18 µC/cm2 and saturation magnetization 69.85 emu/cm3 was obtained for multilayer structure having five layers. The observed enhancement in the multiferroic properties of the multilayer system is due to the increased interfacial stress and multiferroic coupling between the alternating layers.

Zinc oxide (ZnO) thin film deposited onto indium tin oxide (ITO) coated Corning glass substrates using pulsed laser deposition (PLD) technique has been used as a matrix for realization of an efficient urea biosensor after immobilization of urease (Urs) enzyme onto the surface of ZnO. The bioelectrode (Urs/ZnO/ITO/glass) is found to be exhibiting an enhanced sensitivity of 22μΑmΜ−1cm−2 towards urea over a wide detection range of 5-200 mg/dl. The relatively low value of Michaelis menten constant (Km= 0.94mM) indicates high affinity of the immobilized urease towards the analyte (urea). The prepared biosensor retains 90% of its activity for more than 10 weeks. The observed enhanced response characteristics of bioelectrode are attributed to the growth of the matrix (highly c-axis oriented ZnO thin film) with desired surface morphology and high electron communication feature. The results confirm the promising application of PLD grown ZnO thin film as an efficient matrix for urea detection.

Uric acid biosensor has been developed using tin oxide (SnO2) thin film. The electrochemistry of the developed thin film based electrode is investigated by using cyclic voltammetry. The obtained results demonstrate that the semiconducting SnO2 matrix offers a striking electrocatalytic activity to the immobilized uricase towards the oxidation of uric acid and promotes the transfer of electrons from the active sites of enzyme onto the electrode. SnO2 thin film matrix gives a high sensitivity of 0.2 mA/mM and a shelf life of 20 weeks. Moreover, SnO2 electrode exhibits excellent selectivity and outstanding analytical stability and reproducibility, which enables a reliable and selective determination of uric acid. The SnO2 based uric acid biosensor shows a linear variation in a wide range from 0 to 1.0 mM of uric acid concentration and the Michaelis Menten Constant (Km) is estimated to be 0.28 mM which indicated the high affinity of uricase towards its analyte (uric acid). The results indicate that the SnO2 thin film matrix offers a new and promising platform for the development of novel biosensors.

Ultraviolet (UV) photoconductivity in pure ZnO thin films and metal (Ag, Au, Pt) nanoparticles (NPs) dispersed on ZnO thin films based UV photodetectors biased at 5 V for ultra violet radiation of λ = 365 nm and intensity = 24 µwatt/cm2 has been studied. All the three metal (Ag, Au, Pt) NPs synthesized by Polyol process when dispersed on the surface of 100 nm thin ZnO film results in enhanced photoconductive gain (K) in comparison to pure ZnO (3.1×103). An increase of about an order in K has been obtained in the case of Ag NPs/ZnO and Au NPs/ZnO UV photodetectors ( K = 6.9×104 and 5.3×104 respectively). On the other hand, Pt NPs enhance K by about two orders (5.0×105). Such an enhanced photoconductive gain has been achieved due to the lowering of dark current after dispersing the metal NPs on the surface of ZnO and increased photocurrent upon UV illumination. This may be attributed to the plasmon propagating property in metal NPs which enhances the light trapping through optical absorption in ZnO thin film surface (high photo current).

Transparent p-n hetero-junction diodes are fabricated using, p-type NiO and n-type ZnO thin films deposited onto a Pt/Ti/glass substrate utilizing RF sputtering technique. The prepared hetero-junctions are studied for the structural, electrical and optical properties and the effect of post-deposition annealing is investigated through I-V measurements and XRD analysis. The as deposited hetero-junction is found to be giving ohmic behaviour while with post-annealing treatment it result in rectification with a ratio of forward-to-reverse current as high as 15 in the range -1.0 to 1.0 V. Forward threshold and the reverse breakdown voltages are found to be about 0.5 and -2.7 V, respectively. The forward-bias I-V characteristics are dominated by the flow of space-charge-limited current with an optical transmission of above 50 % in the visible region important for the transparent electronic device fabrication.

Temperature dependent optical properties of RF-sputtered c-axis oriented ZnO:N thin film have been investigated. Surface Plasmon modes are excited at the metal-dielectric interface in the Kretschmann-Reather configuration using prism coupling technique. Effect of ZnO:N thin film deposited over Prism-Au structure on the SPR reflectance is studied over a wide range of temperature from 300–500 K at 633 nm wavelength. The value of dielectric constant of ZnO:N film obtained by fitting the experimentally obtained data with the theoretically generated SPR curve at the optical frequency is found to increase linearly with temperature. The increase in dielectric constant (4.03 to 4.11) with increase in temperature from 300 K to 500 K indicates a promising application of the system as an efficient low-cost temperature sensor.

Zinc Oxide (ZnO), II-VI compound semiconductor, is a promising material for ultraviolet (UV) photon sensor applications due to its attractive properties such as good photoconductivity, ease processing at low temperatures and excellent radiation hardness. The rf magnetron sputtering is a suitable deposition technique due to better control over stoichiometry and deposition of uniform film. Studies have shown that the presence of surface defects in ZnO and subsequently their passivation are crucial for enhanced photo-response characteristics, and to obtain the fast response speed. Worldwide efforts are continuing to develop good quality ZnO thin films with novel design structures for realization of an efficient UV photon sensor. In the present work, UV photon sensor is fabricated using a ZnO thin films deposited by rf magnetron sputtering on the corning glass substrate. Photo-response, (Ion/Ioff) of as-grown ZnO film of thickness 100 nm is found to be 3×103 with response time of 90 ms for UV intensity of 140 μW/cm2 (λ = 365 nm). With irradiation on ZnO thin film by pulsed Nd:YAG laser (forth harmonics 266 nm), the sensitivity of the UV sensor is found to enhance. The photo-response increases after laser irradiation to 4x104 with a fast response speed of 35 ms and attributed to the change in surface states and the native defects in the ZnO thin film. Further, enhancement in the ultraviolet (UV) photo-response (8×104) of detector was observed after integrating the nano-scale islands of Sn metal on the surface of laser irradiated ZnO thin film.

This paper reports the response characteristics of rf-sputtered SnO2 thin films (of varying thickness) for LPG detection. To monitor and precisely measure leakages, the development of a reliable LPG sensor with improved sensitivity is crucial in preventing fatal accidents. In the present study, thin film of SnO2 is used as the sensing element for LPG sensor. The thickness of a thin film is a very important parameter and determines their main operating characteristics, such as sensor response, rate of response, and working temperature. In the present study, thickness of SnO2 film is varied between 30 nm to 180 nm. The structure, composition and optical properties of SnO2 thin films have been examined by XRD, SEM, AFM and UV-Vis. The crystallite size for 90 nm thin film (for (110) plane) is found to be the smallest ~4-5 nm. Sensor response $(S = \left( {{{R_a - R_g } \over {R_a }}} \right) \times 100\% )$ increases with thickness of the sensing film, with a highest sensor response (~67%) observed for 90 nm thin film and thereafter it decreases. The structural and optical properties clearly support the observed enhanced sensor response for 90 nm thin film.

In recent years, an increase in usage of methane gas in household and automobile industry has been observed. Detection of methane is always a great cause of concern for safety at home or automobile industries, productions in mines and chemical factories. This paper reports the response characteristics of rf-sputtered SnO2 thin films (90 nm thin) loaded with nanoscale catalytic clusters for detection of methane. Ultrathin (8 nm) metal and metal-oxide catalysts (Pt, Ag, Ni, Pd, Au, NiO, Au2O3) clusters are loaded over the surface SnO2 thin film. The SnO2-Pd cluster structure is found to exhibit an enhanced response (97.2%) for 200 ppm of methane at a relatively low operating temperature (220oC). The enhanced response is shown to be primarily due to the dominant roles played by both Fermi level energy control mechanism and spillover mechanism.

To meet the stringent requirements of device integration and manufacture, surface defects and mechanical stresses that arise during chemical mechanic planarization (CMP) must be reduced. Towards this end, we have synthesized multiple hybrid and composite particles on micron length scales consisting of siloxane co-polymers functionalized with inorganic nanoparticles. These particles can be easily tailored during synthesis, leading to softer or harder abrasion when desired. Upon using these particles for the planarization of silicon oxide wafers, we obtain smooth surfaces with reduced scratches and minimal particle deposition, which is an improvement from conventional abrasive materials like pure silica, ceria and alumina nanoparticle slurries. Tribological characteristics during polishing were examined using a bench top CMP tester to evaluate the in situ co-efficient of friction. Characterization of the hybrid and composite particles has been done using infrared spectroscopy, dynamic light scattering, and electron microscopy. Surface roughness of the wafers was examined using atomic force and optical microscopy while removal rate measurements were conducted using ellipsometry at multiple angles.

Microcomposites composed of titanium dioxide nanoparticles embedded within cross-linked, thermally responsive microgels of poly(N-isopropylacrylamide) were prepared. These microcomposites showed rapid sedimentation, which is useful for gravity separation of the titania nanoparticles in applications such as environmental remediation. To investigate the degradation kinetics using these microcomposites in aqueous suspensions, methyl orange was employed as a model contaminant. The decline in the methyl orange concentration was monitored using UV-Vis spectroscopy. Degradation of methyl orange was also measured using only nanoparticles TiO2 (DegussaTM P25) for comparison with the microcomposites. Experiments were performed at different pH conditions that spanned acidic, neutral, and basic conditions to gain insight into the interplay of TiO2 surface charge, ionization of the polyelctrolyte chains in the microcomposites, and ionization of the methyl orange.

Pulsed laser deposited cerium oxide (CeO2) nanoporous thin film on platinum (Pt) coated glass has been used for immobilization of glucose oxidase (GOx) by electrostatic interaction. Atomic force microscopy studies reveal the formation of nanoporous surface morphology of CeO2 thin film. Differential pulse voltammetric and optical measurements show that the GOx/CeO2/Pt bioelectrode is sensitive to the detection of glucose over the concentration upto 300 mg/dl. A low value of enzyme's kinetic parameter (Michaelis-Menten constant∼1.01 mM) indicates enhanced enzyme affinity of GOx to glucose.

Zinc oxide (ZnO) nanorods were fabricated directly on silicon substrate with diameters in the range of 70-350 nm and up to 15 νm long using pulsed-laser deposition at a relatively low processing temperature (450°C) without any catalytic template. The influences of substrate temperatures and the oxygen pressures on the formation of ZnO nanorods were investigated. The Raman scattering studies and scanning electron microscopy results indicated that the ZnO nanorods were well aligned along c-axis and isolated from each other. The additional Raman modes at ∼ 477 cm−1 and 574 cm−1 were observed in the c-axis oriented ZnO nanorods which attributed to the activation of the upper and lower surface phonon modes respectively.

CaCu3Ti4O12 (CCT) thin films were deposited on Pt/TiO2/SiO2/Si substrates using pulsed laser deposition technique. During the thin films deposition, the substrate temperature was varied in the range of 700–800 °C with a constant O2 pressure of 200 mTorr. X-ray diffraction showed the polycrystalline nature of the films. The dielectric properties of the films were studied in metal insulator configuration. Films grown at higher substrate temperature exhibited highest value of dielectric permittivity (∼2200). Micro Raman spectroscopy was used to study the vibrational modes of the CCT thin films in comparison with the bulk ceramics.