20 results on '"Fitzgerald, Eugene A."'
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2. Direct Growth of III-V Devices on Silicon
3. Vertically Aligned Single Crystalline ZnO Nanorods Grown by Hydrothermal Synthesis and the Theoretical Model for Predicting the Rod Density
4. Growth of GaAs on (100) Ge and Vicinal Ge Surface by Migration Enhanced Epitaxy
5. Mid-10 cm−2 threading dislocation density in optimized high-Ge content relaxed graded SiGe on Si for III-V solar on Si
6. III-V Multi-Junction Materials and Solar Cells on Engineered SiGe/Si Substrates
7. Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates
8. Yellow-green emission for ETS-LEDs and lasers based on a strained–InGaP quantum well heterostructure grown on a transparent, compositionally graded AlInGaP buffer
9. Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions
10. Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates
11. Strategies For Direct Monolithic Integration of AlxGa(1−x)As/InxGa(1−x)As LEDS and Lasers On Ge/GeSi/Si Substrates Via Relaxed Graded GexSi(1−x) Buffer Layers
12. Channel Engineering of SiGe-Based Heterostructures for High Mobility MOSFETs
13. Relaxed Silicon-Germanium on Insulator (SGOI)
14. Strained Ge Channelp-type MOSFETs Fabricated on Si1−xGex/Si Virtual Substrates
15. Direct Growth of III-V Devices on Silicon.
16. Mid-10 cm−2 threading dislocation density in optimized high-Ge content relaxed graded SiGe on Si for III-V solar on Si.
17. Strategies For Direct Monolithic Integration of AlxGa(1− x)As/InxGa(1− x)As LEDS and Lasers On Ge/GeSi/Si Substrates Via Relaxed Graded GexSi(1− x) Buffer Layers.
18. Strained Ge Channel p -type MOSFETs Fabricated on Si1−xGex/Si Virtual Substrates.
19. The Fabrication of Self-Aligned Ohmic Cobalt Contacts to Relaxed, N-Type Si0.7Ge0.3.
20. Correlation Between Defect Density and Process Variables In Step-Graded, Relaxed Si0.7Ge0.3 Grown on Si by Rtcvd.
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