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Among the transition metal oxides, hematite (α-Fe2O3) has been widely used in the preparation of memristors because of its excellent physical and chemical properties. In this paper, α-Fe2O3 nanowire arrays with a preferred orientation along the [110] direction were prepared by a facile hydrothermal method and annealing treatment on the FTO substrate, and then α-Fe2O3 nanowire array-based Au/α-Fe2O3/FTO memristors were obtained by plating the Au electrodes on the as-prepared α-Fe2O3 nanowire arrays. The as-prepared α-Fe2O3 nanowire array-based Au/α-Fe2O3/FTO memristors have demonstrated stable nonvolatile bipolar resistive switching behaviors with a high resistive switching ratio of about two orders of magnitude, good resistance retention (up to 103 s), and ultralow set voltage (Vset = +2.63 V) and reset voltage (Vreset = −2 V). In addition, the space charge-limited conduction (SCLC) mechanism has been proposed to be in the high resistance state, and the formation and destruction of the conductive channels modulated by oxygen vacancies have been suggested to be responsible for the nonvolatile resistive switching behaviors of the Au/α-Fe2O3/FTO memristors. Our results show the potential of the Au/α-Fe2O3/FTO memristors in nonvolatile memory applications. [ABSTRACT FROM AUTHOR]

A facile sol–gel spin coating method has been proposed for the synthesis of spin-coated ZnO nanofilms on ITO substrates. The as-prepared ZnO-nanofilm-based W/ZnO/ITO memory cell showed forming-free and tunable nonvolatile multilevel resistive switching behaviors with a high resistance ratio of about two orders of magnitude, which can be maintained for over 103 s and without evident deterioration. The tunable nonvolatile multilevel resistive switching phenomena were achieved by modulating the different set voltages of the W/ZnO/ITO memory cell. In addition, the tunable nonvolatile resistive switching behaviors of the ZnO-nanofilm-based W/ZnO/ITO memory cell can be interpreted by the partial formation and rupture of conductive nanofilaments modified by the oxygen vacancies. This work demonstrates that the ZnO-nanofilm-based W/ZnO/ITO memory cell may be a potential candidate for future high-density, nonvolatile, memory applications. [ABSTRACT FROM AUTHOR]

A facile hydrothermal process has been developed to synthesize the α-Fe2O3 nanowire arrays with a preferential growth orientation along the [110] direction. The W/α-Fe2O3/FTO memory device with the nonvolatile resistive switching behavior has been achieved. The resistance ratio (RHRS/RLRS) of the W/α-Fe2O3/FTO memory device exceeds two orders of magnitude, which can be preserved for more than 103s without obvious decline. Furthermore, the carrier transport properties of the W/α-Fe2O3/FTO memory device are dominated by the Ohmic conduction mechanism in the low resistance state and trap-controlled space-charge-limited current conduction mechanism in the high resistance state, respectively. The partial formation and rupture of conducting nanofilaments modified by the intrinsic oxygen vacancies have been suggested to be responsible for the nonvolatile resistive switching behavior of the W/α-Fe2O3/FTO memory device. This work suggests that the as-prepared α-Fe2O3 nanowire-based W/α-Fe2O3/FTO memory device may be a potential candidate for applications in the next-generation nonvolatile memory devices. [ABSTRACT FROM AUTHOR]