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Recently, touch screen panel technology is applied not only mobile device but also large size display. Therefore, it is necessary to develop the evaluation tool for large size touch sensor. In this study, the touch sensor used 23 inch size panel. The touch sensor used metal mesh as a transparent electrode. The metal mesh electrodes are a diamond shape structure and Cu material. The width between the electrodes is 10 μm. The structure of touch sensor is glass/film/film. The numbers of transmit layer and receive layer are individually 78 and 141. The characteristic evaluation of touch sensor is used by touch evaluation program which is based on Window 7. There are 4 anti-vibration poles under touch sensor for reducing ground vibration noise. The signal of touch input is made by conductive pen which is 8Φ, Cu rod. A new evaluation tool was proposed in order to promote the objective operation evaluation of a large size touch panel. The performance evaluation index is signal noise ratio, response time, hover effect, accuracy, precision and multi-touch recognition. The proposed evaluation tool is able to evaluate the large-size touch sensors. [ABSTRACT FROM PUBLISHER]

The efficiency and life time of flexible OLED are still major problem to overcome compared to the OLED devices based on glass substrate. The short life time of flexible OLEDs are attributed to the increased penetration of oxygen and water vapor to the thin organic layer of OLED device through the flexible polymer film substrate. In this work, we prepared glass fiber reinforced polymer film (GFRF) for use as substrate of flexible OLED. The glass fabric was immersed in the UV curable resin and packed between the transparent glass templates followed by UV irradiation for conversion to GFRF. The optical and mechanical properties of the GFRF films were examined and optimized for use as substrate of flexible OLEDs. The gas barrier layers were formed on the GFRF films. The deposition of ITO/Ag/ITO transparent conduction anode was carried out by using roll-to-roll sputter followed by fabrication of flexible OLEDs. The effect of process conditions on the property of flexible OLEDs were studied from the view point of application to the OLED lighting and signage of flexible OLEDs. [ABSTRACT FROM AUTHOR]

Touch screen displays have been a subject of growing interest in recent years due to the significant usability benefits they provide for portable electronic devices ranging from mobile phones to tablet PCs. In this paper we report the preparation of index-matched ITO-PET films by depositing thin films of SiNx, SiOx and ITO on hard coated polyethylene terephthalate (PET) film utilizing roll-to-roll sputtering system. [ABSTRACT FROM AUTHOR]

Cu(In,Ga)Se2 thin films were prepared using co-sputtering and proximity selenization. This new method supplies Se by closely attaching opposite a metal precursor. CuInSe2 thin film was produced at 280°C, and consisted of small structures. As the temperature was increased, more Ga was substituted in place of In, while the X-ray peak of the CuInSe2 shifted to the right. A thin film with a Cu:In:Ga:Se ratio of 1:0.7:0.3:2 was obtained at 480°C, which is comparatively lower than the temperature needed when using Se vapor. This grew into crystals with a diameter of 3–5 μm. [ABSTRACT FROM PUBLISHER]

Currently, substrate thin film solar cells with Cu(In,Ga)Se2(CIS) absorbers yield conversion efficiencies of up 20.4%, the highest published efficiency of CIS superstrate thin film solar cells is 12.8%. It is the maximum efficiency when composition is as follow; Cu, In and Se was 1, 1 and 2. The maximum efficiency of CIS superstrate thin film solar cell is smaller than that of CIS substrate thin film solar cell, but manufacturing cost of CIS superstrate is lower than that of CIS substrate since the reduce of the manufacturing process. In addition, CIS absorber layer is fabricated through binary phases to reduce the process temperature and processing price. In this study, CIS superstrate thin film solar cell was fabricated to reduce the device manufacturing cost and CIS absorber layer was deposited by the binary phases. By using substrate (Sodalime Glass,SLG), window layer(i-ZnO, Al:ZnO)were deposited on n-type transparent electrode layer in the upper part. CIS absorber was respectively deposited by In2Se3 and CuSe in a binary phases by using MBE(Molecular Beam Epitaxy). The deposited sample went through heat process, and then electrode was created to fabricate the device. In order to identify the structural and electrical characteristics depending on CuSe deposition time, CIS absorber and CIS solar cell device, analysis was conducted by using XRD (X-ray Diffractometer, Bulk, PANalytical), FE-SEM (Field Emission Scanning Electron Microscope, S-4800, HITACHI), ICP(Inductively Coupled Plasma, ICPS-8100, Shimadzu),SIMS (Secondary Ion Mass Spectrometry, IMS 6F, CAMECA) and solar-simulator(AM1.5g, 100 mW/cm2). [ABSTRACT FROM PUBLISHER]

The maximum efficiency of Cu(Inx,Ga1-x)Se2(CIS) superstrate thin film solar cell is smaller than that of CIS substrate thin film solar cell, but its device fabrication price is lower because the number of thin-film process is fewer. In addition, CIS absorber layer is fabricated through binary process to reduce the process temperature and processing price. In this study, CIS superstrate thin film solar cell was fabricated to reduce the device fabrication cost and CIS absorber layer was deposited by the binary process. By using Sodalime Glass (SLG), Al:ZnO and ITO were deposited on n-type transparent electrode layer in the upper part. CIS absorber was individually deposited by InSe(In2Se3) and CuSe in a binary type by using Molecular Beam Epitaxy (MBE). The deposited sample went through heat process, and then electrode was created to fabricate the device. In order to identify the structural and electrical characteristics of the various transparent electrodes, CIS absorber and CIS solar cell device, analysis was conducted by using X-ray Diffractometer(XRD, Bulk, PANalytical), Field Emission Scanning Electron Microscope (FE-SEM, S-4800, HITACHI), Inductively Coupled Plasma (ICP, ICPS-8100, Shimadzu), Secondary Ion Mass Spectrometry (SIMS, IMS 6F, CAMECA) and solar-simulator (AM1.5 g, 100 mW/cm2). [ABSTRACT FROM PUBLISHER]

The low capacitance in the panel contributes to a reduction of power consumption in a Plasma Display Panel system. In this paper, the capacitances of the counter and coplanar electrode structures are compared on the basis of the measurement of discharge and displacement current. The sustain gap of the counter structure is wider than that of the coplanar structure under the same discharge volume. Furthermore, the sustain electrode area of the counter structure is smaller than that of the coplanar structure. Accordingly, the capacitance of the counter structure is lower than that of the coplanar structure for the same discharge volume and sustain gap. [ABSTRACT FROM AUTHOR]

In this study, to analyze the effect of the second stage (Cu–Se) deposition time on CIGS property, the experiment of controlling the time of the second stage was conducted. Especially, very low values were found for device properties when it was 3300s and 3500s in the second stage. It was observed that excess Cu2–xSe diffused excessively on the surface of the thin film, causing a lot of pores and voids on the surface. With the same evaporation ratio for each source of Cu, In, Ga, and Se, it is very important to apply the 2700s process time for the second stage in order to produce high-efficiency device. The efficiency property of device was checked through solar-simulator (AM1.5G, 100 mW/cm2 at 25°C). In case the process time of the second stage was 2700s, efficiency was as following: 10.1%, Voc: 0.53V, Jsc: 33.5 mA/cm3, fill-factor: 57.2%. The analysis results obtained in this study are expected to be useful for various domestic and overseas research which aim to make high-efficiency solar cells based on proper variation of the second-stage processing time. [ABSTRACT FROM PUBLISHER]

It is known that even mixing only a small amount of Na has effect on electrical and structural property of the CIGS absorber layer and, as a result, device efficiency is improved. In this study, unlike the conventional method where Na diffuses from SLG while CIGS absorber is growing, a new method was applied. In the new method, Na precursor is deposited on the CIGS absorber layer grown on Al2O3/SLG to incorporate Na. The effect of Na on the absorber layer was observed using secondary ion meass spectroscopy, Hall measurement system, scanning electron microscopy, and x-ray diffraction. As a result, it was found that, in the post deposition treated CIGS absorber layer, Na has effect mostly on the electrical property of CIGS without significant change of the microstructure. [ABSTRACT FROM PUBLISHER]

In the current study, chemical bath deposition (CBD) was used to grow CdS thin films on a Cu(In,Ga)Se2 (CIGS) absorption layer, in order to examine the effects of CdS deposition conditions on the properties of CIGS solar cell devices. The dip time leading up to the start of CdS synthesis is thought to be an important process variable determining the concentration of Cd ions diffused into the CIGS as well as the condition of the CIGS surface. Accordingly, the behavior of the CIGS solar cell efficiency variation was observed while different dip times were applied, at 4, 15 and 30 minutes, respectively. When the dip time was extended, the series resistance (Rs) of the device fell by a substantial margin, leading to improved photoelectric conversion efficiency and enhanced uniformity in device properties. This can be attributed to the effect of CIGS surface cleaning by the NH4OH contained in the reaction solution. [ABSTRACT FROM PUBLISHER]

In this study, Cu(In,Ga)Se2 thin films were prepared using a Cu-In-Ga metallic precursor and diethylselenide (DESe) vapor. The Cu/(In+Ga) ratio of the precursor was adjusted by modulating the power impressed on the CuGa target. The Cu/(In+Ga) ratio was varied from 0.45 to 1.02, and the prepared precursors were selenized in a 500°C quartz furnace using DESe. The results showed that the preferred crystal phase and the uniformity of the thin film differed according to the composition of the precursor. After selenization, changes in grain size stemming from Cu composition were observed, and the occurrence of a binary phase was verified through KCN etching. Shifts in the Cu11(InGa)9 peak and the separation of CIS and CGS peaks relative to increased Ga content were also observed. [ABSTRACT FROM PUBLISHER]

Cd2SnO4(CTO) thin film was made using RF magnetron sputtering and a single (CTO) target. Among various deposition variables, the effect of changes in plasma power on the electrical and optical properties of the film was investigated. It was observed, as plasma power grows, specific resistivity of the thin film increases while transmittance considerably decreases. It was found that such a phenomenon occurred because of the density of the thin film reduced by increased deposition speed. Another noteworthy result obtained through the X-ray photoelectron spectroscopy analysis is that Sn has metallic bond in the case of the thin film deposited under high power. It seems that existence of such metal was another cause of the reduced transmittance of the thin film. [ABSTRACT FROM PUBLISHER]

CTO (Cadmium Stannate) thin films, one of TCOs (Transparent Conducting Oxide) having a potential application for photovoltaic or display product, were prepared by using rf magnetron sputtering system. The lowest resistivity of CTO thin film deposited at room temperature was 6.6 × 10-4 ohm · cm with carrier mobility of 9.1 cm2/Vs and carrier concentration of 10.4 × 1020 cm-3. The average transmittance of CTO thin film was found to be over 80% regardless of deposition condition. The transmittance of the annealed CTO thin film at 600°C in air atmosphere, was found to increase upto more than 90%, but the film resistivity degraded by two order of magnitude due to the decreased carrier concentration with minor increase of carrier mobility. [ABSTRACT FROM AUTHOR]

In this paper the effect the Ga/(In+Ga) ratio, which was controlled by Ga cell temperature, on the growth behavior of Cu(In,Ga)Se2 (CIGS) thin film and its photovoltaic performance is presented. It was found that both the grain size and the void density of CIGS layer decreased due to higher incorporation of Ga in CIGS by increasing Ga temperature. It was revealed that the CIGS films satisfying the composition ratio of Ga/(In+Ga) = 0.3∼0.4 and Cu/(In+Ga) = 0.84∼1.04, which were obtained at the Ga temperature of 1033∼1035°C, has the comparable diffraction intensity of (112) and (220) peaks. The (112)/(220) peak ratio of either Cu-rich or heavily Cu-poor CIGS films was found to deviate from unity and the solar cells made at these composition range showed lower photovoltaic performances. The highest efficiency of solar cell obtained by adjusting Ga cell temperature was 8.93% on device area of 0.16 cm2 (fill factor, open circuit voltage, and short circuit current were 50.34%, 576 mV and 30.79 mA/cm2, respectively). [ABSTRACT FROM AUTHOR]

Cu(In,Ga)Se2 (CIGS) compound, which has high optical absorption coefficient as direct transition type semiconductor, is very suitable for thin film solar cell due to its high thermal stability and moisture tolerance as well as its low fabrication cost compared to the standard crystalline Si solar cell. In this research, it was tried to control the absorption capability of CIGS layer by changing Ga/(In + Ga) ratio. The composition of film was changed by controlling the effusion-cell temperature of Cu, In, Ga at a fixed Se flux. Each sample was analyzed by using SEM (scanning electron microscope), EDS (energy dispersive spectroscopy), XRD (X-ray diffractometer) to confirm the optimum composition ratio of Cu/(In + Ga) = 0.82∼0.95, Ga/(In + Ga) = 0.26∼0.31, Cu/Se = 0.5. [ABSTRACT FROM AUTHOR]

We have discussed the effects of substrate temperature and Sb2O3 composition on properties of ATO thin films by RF magnetron sputtering. Above 250°C of substrate temperature, the films exhibited good crystallographic and electrical properties. At fixed substrate temperature of 250°C, the electrical properties of ATO film were enhanced with increasing Sb concentration. From the AES depth profile and XRD pattern for the film with 92:8 of SnO2:Sb2O3 composition, we found that Sb was uniform and there was no secondary phase or phase separation in ATO film. The rms roughness of the films was minimum value, 1.54 nm, at the composition of 92:8 wt%. For the ATO thin film with 92:8 composition exhibited good chemical endurance and thermal stability, which seems to be good for touch panel applications. [ABSTRACT FROM AUTHOR]