Search

A first-principles method was used to explore the influence of tensile strain on the electrical and optical characteristics of Nb-doped MoSe2. The tensile strain has been discovered to have a higher influence on the electrical structure of the Nb-doped MoSe2 system than pure monolayer MoSe2. According to the energy band structure study, the pure monolayer MoSe2 is a direct bandgap semiconductor, but the system doped with Nb instead of Mo atoms is a p-type-doped semiconductor. The bandgap of the Nb-doped MoSe2 system decreases gradually with the increase of tensile strain, but still maintains the p-type semiconductor properties, and the bandgap of the pure monolayer MoSe2 also decreases gradually with the increase of tensile strain. From the density of states analysis, it is found that for the total density of states of the doped system at different tensile strains, it is mainly contributed by the Mo-4d and Se-4p orbitals. The optical properties analysis showed that the doped system under tensile strain had higher absorption coefficient and reflectance peak than the Nb-doped MoSe2 system without tensile strain. Additionally, the doped system showed redshift phenomenon in both the absorption and reflection peaks as the tensile strain increased. [ABSTRACT FROM AUTHOR]

In this paper, the structural, electrical and optical effects of WS2 doped with silicon atoms after torsional deformation are investigated using first-principles calculations. First-principles calculations for metal disulfide-WS2. The doping of Si atoms gives WS2 a tunable band gap, and the surface state is successfully transformed from a 2.0 eV band gap to a quasi-metal with a 0.254 eV band gap, and the change of the doped Si atoms causes a redshift in the absorption peak and a blueshift in the reflection peak. The band gap of WS2 can be effectively adjusted by torsional deformation on the basis of Si-doped atoms in the range 0.254–0.052 eV. Calculations of optical properties show that Si-doped WS2 with a torsion angle of 1 0 ∘ has the lowest light absorption peak and Si-doped WS2 with a torsion angle of 8 ∘ has the lowest light reflection peak. This paper opens up new possibilities for designing materials on demand. [ABSTRACT FROM AUTHOR]

In this paper, the structural, electrical and optical effects of WS2 doped with silicon atoms after torsional deformation are investigated using first-principles calculations. First-principles calculations for metal disulfide-WS2. The doping of Si atoms gives WS2 a tunable band gap, and the surface state is successfully transformed from a 2.0 eV band gap to a quasi-metal with a 0.254 eV band gap, and the change of the doped Si atoms causes a redshift in the absorption peak and a blueshift in the reflection peak. The band gap of WS2 can be effectively adjusted by torsional deformation on the basis of Si-doped atoms in the range 0.254–0.052 eV. Calculations of optical properties show that Si-doped WS2 with a torsion angle of 1 0 ∘ has the lowest light absorption peak and Si-doped WS2 with a torsion angle of 8 ∘ has the lowest light reflection peak. This paper opens up new possibilities for designing materials on demand. [ABSTRACT FROM AUTHOR]