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This letter presents a 2.1 GHz Class-C quadrature voltage-controlled oscillator (QVCO) working on coupling two identical Class-C VCOs. The class-C oscillator is used to achieve the performance of low phase noise. The QVCO uses a varactor ring to generate quadrature phase and it was implemented using the TSMC 0.18 μm CMOS 1P6M process. The output phase noise of the QVCO is −130.34 dBc/Hz at 1 MHz offset frequency from the output carrier frequency of 1.978 GHz; the quadrature phase error is 0.33° and the figure of merit is −190.61 dBc/Hz. Total power consumption is 3.9 mW. Tuning range is about 422 MHz (19%) between 1.978 and 2.4 GHz, while the control voltage was tuned from 0 V to 2 V. The die area is 0.528 × 1.168 mm2. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:1961–1964, 2016

This letter presents a triple-band (TB) oscillator using two 4th order LC resonator to form a 6th order resonator. The TB cross-coupled oscillator two pairs of back-to-back varactors for band switching and it has been implemented with CMOS devices in the TSMC 0.18μm SiGe 3P6M BiCMOS technology. The core power consumption of the high (middle, low)-band core oscillator are 2.25(2.33, 2.58) mA and 1.8(1.86, 2.06) mW, respectively at the dc drain-source bias of 0.8V. The oscillator can generate differential signals in the frequency range of 8.44–8.71GHz, 6.74–6.86GHz, and 4.22–4.47 GHz. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:580–583, 2016

This letter presents a wide-locking range CMOS divide-by-3 injection-locked frequency dividers (ILFD) using single-ended injection signal. The fabricated 0.18 μm CMOS ÷3 ILFD uses cross-coupled switching transistors, single-injection MOSFET, and a dual-resonance RLC resonator. The consumed power of the ÷3 ILFD core is 7.97 mW at the DC drain-source voltage 0.76 V. At an external injected signal power Pinj = 0 dBm, the measured locking range is 2.97 GHz (25.25%) from 10.28 to 13.25 GHz and the operation range is 5.17 GHz (48.5%) from 8.08 to 13.25 GHz. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:2720–2723, 2015

This letter presents a three-phase VCO consisted of three identical single-ended Clapp pMOSFET VCOs coupled by a pMOSFET ring and tail inductors. The three-phase circuit operation is based on the interaction of frequency tripler and divide-y-3 injection-locked frequency divider in addition to the MOSFET-ring coupling. The fully integrated 8.5 GHz three-phase VCO was fabricated in 90 nm CMOS process, the frequency tuning range is from 8.08 to 8.94 GHz and the VCO-core power consumption is 4.04 mW at the supply voltage of 0.88 V. The measured phase noise is −117.18 dBc/Hz at 1 MHz offset frequency from the carrier frequency 8.822 GHz. The VCO occupies a chip area of 0.864 × 0.76 mm2 and provides a figure of merit of −190.1 dBc/Hz. The phase noise is reduced through optimizing capacitor value in the Colpitts negative resistance cell. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2529–2532, 2015

A wide locking range divide-by-3 injection-locked frequency divider (ILFD) using a standard 0.18-μm SiGe 3P6M BiCMOS process is presented. The ÷3 ILFD circuit is realized with an n-core MOS LC-tank oscillator. The ILFD uses a push-push signal circuit and two linear mixers with one radio-frequency injection input port and one push-push signal input port. An HBT is used to amplify the push-push signal and extend locking range. The core power consumption of the ILFD core is 13.2 mW at the drain-source voltage of 0.8 V. The divider's free-running frequency is tunable from 3.079 to 3.163 GHz and at the incident power of 0 dBm, the locking range is 19.28%, from 8.9 to 10.8 GHz. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:493–497, 2014

This article presents a new quadrature voltage-controlled oscillator (QVCO). The LC-tank QVCO consists of two first-harmonic injection-locked oscillators (ILOs). The outputs of one ILO are injected to the common nodes of capacitors on the other ILO and vice versa so as to force the two ILOs operate in quadrature. At the supply voltage of 1.1 V, the total power consumption is 5.94 mW. The free-running frequency tuning range is 11.5%, tunable from 6.56 to 7.36 GHz as the tuning voltage is varied from 0.0 to 2 V. The QVCO has been implemented with the TSMC 0.18-μm CMOS technology and the die area is 0.504 × 0.803 mm2. The measured phase noise at 1-MHz offset is −123.01 dBc/Hz at the oscillation frequency of 7.34 GHz and the figure of merit of the proposed QVCO is about −192.5 dBc/Hz. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2528–2531, 2013

A wide locking range divide-by-2 CMOS LC-tank injection locked frequency divider is proposed and is realized with two mixers in series and a cross-coupled oscillator with dual-resonance LC resonator to provide large output voltage swings at high- and low-frequency bands. The dual-band function can be obtained without switching. Measurement results show that at the supply voltage of 0.8 V, the free-running frequency is from 3.571 to 3.974 GHz for the high-frequency band and from 2.278 to 2.349 GHz for the low-frequency band. At Vtune = 1.2 V, an external injected signal power of 0 dBm provides a low-band divide-by-2 locking range (57.7%) from 2.87 to 5.2 GHz and a high-band locking range (25.7%) from 7.1 to 9.2 GHz. At Vtune = 0 V an external injected signal power of 0 dBm provides a high-band locking range (46.5%) from 5.6 to 9 GHz and a low-band locking range (25.0%) from 2.8 to 3.6 GHz. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2333–2337, 2013

This article proposes a mode-switching dual-band CMOS standing-wave oscillator (SWO) implemented with a distributed left-handed (LH) LC network and CMOS mode switches. The SWO consists of four units of LH LC resonator stacked in series, and the LC resonator is in shunt with a pair of cross-coupled transistors to compensate the loss of LC resonator. A pair of MOSFET mode-switches is used to switch on/off the frequency bands. In the fundamental mode, the SWO operates at the high-frequency band. In harmonic mode, the oscillator provides low-frequency band outputs. The dual-band function exploits the multiple oscillation mode of the LH SWO. The proposed SWO has been implemented with the TSMC 0.18 μm 1P6M CMOS technology. It can generate differential signals in the high-band frequency range of 7.18–7.55 GHz and in the low-band frequency range of 4.5–4.64 GHz. The die area of the SWO is 0.991 × 0.815 mm2. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2074–2077, 2013

This letter presents a fully integrated cross-coupled quadrature voltage-controlled oscillator (QVCO) using common-gate transistor instead of common-source transistor as a coupling device. The prototype wide-tuning X-band QVCO in 0.18-μm CMOS process is proposed to generate four output phases and consists of two n-core cross-coupled VCOs and four pMOS coupling devices. The proposed QVCO oscillates from 8.52 to 10.56 GHz and the power consumption is 9.76 mW at 0.8 V supply voltage. The measured phase noise is −118.88 dBc/Hz at 1-MHz offset frequency from the carrier frequency 9.86 GHz. The QVCO occupies a chip area of 0.623 × 1.197 mm2 and provides a figure of merit of −188.86 dBc/Hz. The figure of merit including tuning range, FOMT, of this QVCO is −195.30 dBc/Hz. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1705–1708, 2013

A dual-resonance complementary Colpitts voltage-controlled oscillator (VCO) is proposed to serve as a dual-band oscillator operated at 4.3 and 11.7 GHz.The VCO consists of two single-ended dual-resonance LC-tank complementary Colpitts oscillators sharing a common varactor-switching LC resonator. The proposed VCO has been implemented with the TSMC 0.18 μm 1P6M CMOS technology and the core power consumption is 3.60/3.96 mW at the supply voltage of 1.2 V. The VCO has figure of merit −192.7/−189.4 dBc/Hz at high/low band, respectively. The die area of the dual-band VCO is 0.822 × 0.628 mm2. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1494–1497, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27626

This article studies the bias and oscillation-amplitude dependent RF tuning property of varactor-switching dual-band voltage-controlled oscillators (VCOs). The dual-resonance LC-tank n-core and p-core VCOs have been fabricated using 0.18 μm CMOS technology, and they use dual-resonance LC resonator consisted of a parallel-tuned LC resonator and a series resonant resonator. The accumulation-mode MOS varactors are used. The RF circuit parameters such as oscillation frequency, tuning range, and transition frequency between low-band and high band as a function of varactor bias, supply voltage, and oscillation amplitude are examined experimentally. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1389–1393, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27574

This article presents a fully integrated quadrature cross-coupled voltage controlled oscillator (QVCO) using common-drain transistor instead of common-source transistor as a coupling device.The prototype 3.8 GHz QVCO in 0.18 μm CMOS process is proposed to generate four output phases and it uses two p-core cross-coupled VCOs and nMOS coupling devices. The proposed QVCO oscillates from 3.6 to 3.84 GHz and the power consumption is 7.24 mW at 0.74 V supply voltage. The measured phase noise is –126.19 dBc/Hz at 1 MHz offset frequency from the carrier frequency 3.745 GHz. The VCO occupies a chip area of 1.08 ×0.924 mm2 and provides a figure of merit of –189.05 dBc/Hz. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1262–1266, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27578

This letter proposes a dual-band CMOS voltage-controlled oscillator (VCO) implemented with a distributed composite right/left-handed (CRLH) LC network.The VCO consists of four units of left-handed LC resonator stacked in series, the LC resonator in shunt with a pair of cross-coupled transistors, and a varactor serving as frequency band switching element. The parasitic inductors turn the left-handed LC network to a CRLH network. In the fundamental mode, the VCO operates at the high-frequency band. In harmonic mode, the oscillator provides low-frequency band outputs. The VCO exploits the multiple oscillation mode of the CRLH standing wave oscillator. The proposed VCO has been implemented with the TSMC 0.18 μm 1P6M CMOS technology. It can generate differential signals in the high-band frequency range of 7.23–7.86 GHz and in the low-band frequency range of 3.81–5.32 GHz. The die area of the VCO is 0.991 × 0.815 mm2. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:985–988, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27487

A new CMOS quadrature voltage-controlled oscillator (QVCO) is proposed. The LC-tank QVCO consists of two balanced complementary Colpitts VCOs with differential outputs. The tail inductor output of the first balanced VCO is injected to the gate of the tail transistor in the second balanced VCO and vice versa to ensure the two balanced VCOs operate in quadrature. At the supply voltage of 1.2 V, the total power consumption is 4.32 mW. The free-running frequency tuning range is 13.4%, tunable from 5.92 to 6.77 GHz as the tuning voltage is varied from 0 to 2 V. The QVCO has been implemented with the TSMC 0.18 μm CMOS technology and the die area is 0.843 × 1.024 mm2. The measured phase noise at 1 MHz offset is −121.67 dBc/Hz at the oscillation frequency of 6.74 GHz and the figure of merit of the proposed QVCO is about −191.89 dBc/Hz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:700–703, 2013; View this article online at wileyonlinelibrary.com. DOI: 10.1002/mop.27433

A low-phase noise triple-band voltage-controlled oscillator (VCO) is proposed and it consists of a triple-resonance LC resonator and a cross-coupled switching transistor pair. In the proposed VCO that uses the triple-resonance LC-resonator, band switching is achieved by tuning the varactors in the resonator without using lossy switches in the resonator path. The triple-resonance LC resonator comprises a parallel-tuned LC resonator and two series resonant resonators. The proposed VCO has been implemented with the TSMC 0.18 μm 1P6M CMOS technology and the core power consumption is 3.12 mW at the dc drain–source bias of 0.8 V. The VCO can generate differential signals in the frequency range of 6.651∼7.146 GHz, 5.607∼5.941 GHz, and 3.15 GHz∼3.483 GHz. The die area of the triple-band VCO is 0.684 × 0.754 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:737–740, 2013; View this article online at wileyonlinelibrary.com. DOI: 10.1002/mop.27431

This article proposes a high-performance CMOS voltage-controlled oscillator (VCO) implemented with composite right-/left-handed nonmobius-connected LC-rings to provide dual-band differential outputs.The VCO consists of two cross-coupled sub-VCOs sharing series-LC resonators. nMOSFET switches are used to control high- and low-band outputs. The proposed VCO has been implemented with the TSMC 0.18 μm SiGe BiCMOS technology. The die area of the VCO is 1.16 × 1.12 mm2. With the switch on, the odd-mode VCO operates at the high-frequency 6 GHz band, and when the switch is off, the even-mode VCO operates at the low-frequency 4 GHz band. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:468–471, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27375

A dual-band cross-coupled oscillator is proposed to operate at 5 and 9 GHz. The oscillator consists of two cross-coupled BiCMOS oscillators with shared series-tuned LC-tank. In the even-mode, the series-tuned LC-tank takes no part in affecting the oscillation frequency, whereas in the odd-mode, the series-tuned LC-tank plays the role in the oscillation frequency. The proposed oscillator has been implemented with the TSMC 0.18 μm SiGe BiCMOS technology and the core power consumption is 2.6 mW at the supply voltage of 0.7 V. The figure of merit is −192/−190 dBc/Hz at high-/low-band. The die area of the dual-band VCO is 1.04 × 0.755 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:485–488, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27368

On-chip high-frequency frequency sources suffer from quality (Q)-factor degradation of varactors.Injection-locked frequency multipliers allow the design of oscillators running at a frequency lower than required to take the advantage of higher Q-factor varactor. This article proposes a fully integrated CMOS LC-tank injection-locked frequency quadrupler fabricated in the TSMC 90 nm RF-CMOS process and describes the circuit design, operation principle, and measurement results of the quadrupler. The injection-locked frequency quadrupler comprises a first-harmonic injection-locked oscillator with dual-injection ports, two frequency doublers and a transformer balun. At the supply voltage of 0.7 V, the dc power consumption is 9.1 mW. At the incident power of 0 dBm, the injection-locked frequency quadrupler can provide an output signal with the frequency from 24 to 29.6 GHz, while the frequency of the injection signal varies from 6 to 7.4 GHz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:266–269, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27291

This article presents a new fully-integrated quadrature voltage-controlled oscillator (QVCO), which consists of two differential VCOs coupled via an inductor-ring. The proposed CMOS QVCO has been implemented with the TSMC 0.18-μm CMOS technology and the die area is 0.693 × 0.976 mm2. At the supply voltage of 0.7 V, the total power consumption is 2.58 mW. The free-running frequency of the QVCO is tunable from 5.15 to 5.55 GHz as the tuning voltage is varied from 0 to 0.7 V. The measured phase noise at 1 MHz frequency offset is −120.88 dBc/Hz at the oscillation frequency of 5.28 GHz and the figure of merit of the proposed QVCO is −191.21 dBc/Hz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:310–313, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27283

A dual-resonance balanced voltage-controlled oscillator (VCO) is proposed to serves as a dual-band oscillator operated at 3.5 and 8.5 GHz. The VCO consists of two single-ended dual-resonance LC-tank complementary Colpitts oscillators configured in a balanced topology. The proposed VCO has been implemented with the TSMC 0.18 μm 1P6M CMOS technology and the core power consumption is 4.21 mW at the supply voltage of 1.2 V. The figure of merit is −190.22/−190.3 dBc/Hz at high/low band. The die area of the dual-band VCO is 0.995 × 0.55 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:194–197, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27234

A low power wide locking range divide-by-4 injection-locked frequency divider (ILFD) is proposed in the letter and was implemented in the TSMC 0.18 μm SiGe BiCMOS process. The divide-by-4 ILFD uses a cross-coupled voltage-controlled oscillator with an active inductor and a three-transistor composite consisted of two nMOSFETs and one pMOSFET to serve as an injection device with the function of linear and nonlinear mixers. At the supply voltage of 1.5 V and at the incident power of 0 dBm, the operation range of the divide-by-4 is 2.3 GHz, from the incident frequency 14.5 to 16.8 GHz, the percentage is 14.7%. The locking range of the divide-by-4 is 1.7 GHz, from the incident frequency from 14.6 to 16.3 GHz, the percentage is 11%. The core power consumption is 1.5 mW. The die area is 0.465 × 0.317 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2825–2828, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27204

This letter develops a phase noise formula for injection-locked frequency dividers (ILFDs) implemented with dual-resonance LC tank, which consists of a series LC resonator and a parallel LC resonator. In parallel-tuned single-resonance ILFD, the output phase noise is set by the noise of the injection signal at low frequency offset from the carrier, while it can be dominated by the divider noise at large frequency offset. The developed theory shows that the phase noise equations of a series-tuned single-resonance ILFD and dual-resonance ILFDs has a common phase noise equation as the one used for a single-resonance parallel-tuned ILFD. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2491–2494, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27105

This letter presents a quadrature injection-locked frequency divider (QILFD) to achieve high-speed, wide-locking range, accurate quadrature output phases, and large output voltage swing.The QILFD consists of two differential top-series-injected injection-locked frequency dividers coupled by four parasitic bipolar junction transistors (BJTs). The MOSFET with the coupling BJT is used as a top-series RF injector and linear mixer. The proposed QILFD has been implemented with the TSMC 0.13-μm CMOS technology and the core power consumption is 6.02 mW at the supply voltage of 0.8 V. The operation range is from 9.2 to 12.8 GHz while the input power is 0 dBm. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2284–2287, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27089

A low phase noise dual-band voltage-controlled oscillator (VCO) is proposed to achieve large voltage swings at both high-frequency and low-frequency bands. The VCO consists of a dual-resonance LC resonator and a cross-coupled switching transistor pair. The dual-resonance LC resonator comprises a parallel-tuned LC resonator and a series-resonant resonator. The proposed VCO has been implemented with the TSMC 0.18-μm 1P6M CMOS technology and the core power consumption is 1.99 mW at the DC drain-source bias of 0.51 V. The VCO can generate differential signals in the frequency range of 8.19–8.77 GHz and 3.38–3.84 and it also has comparable high output voltage swings at both low- and high-frequency bands. The die area of the dual-band VCO is 0.47 × 0.748 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2349–2352, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27097

A new fully integrated, dual-band CMOS voltage controlled oscillator (VCO) is presented. The VCO is composed of a p-core cross-coupled and an n-core cross-coupled Colpitts oscillator with dual-resonance LC tank and was implemented in 90-nm CMOS technology with 1.15 V supply voltage. The circuit allows the VCO to operate at two resonant frequencies with a common LC tank. This VCO is configured with 6.3 and 10 GHz frequency bands with differential outputs. The dual-band VCO operates at 6.11–6.413 GHz and 9.72–10.24 GHz. The phase noises of the VCO operating at 9.72 and 6.4 GHz are −116.31 dBc/Hz and −122.79 dBc/Hz at 1-MHz offset, respectively, while the VCO draws 4/4.28 mA and 4.6/4.92 mW consumption at high/low frequency band from a 1.15-V supply. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1590–1593, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26882

This letter proposes a wide locking range and operation range divide-by-4 injection-locked frequency divider (ILFD) in the TSMC 0.18-μm 1P6M RF-CMOS process.The divide-by-4 ILFD uses an active inductor to increase the tuning range and a transistor composite to serve an injection device with two linear mixers to enhance the locking range of ILFD. At the supply voltage of 1.7 V, and at the incident power of 0 dBm the operation range of the divide-by-4 is about 5.8 GHz, from the incident frequency 3.6 to 9.4 GHz, the percentage is 89.2%. The locking range of the divide-by-4 is 1.8 GHz, from the incident frequency 6.8 to 8.6 GHz, the percentage is about 23.4%. The core power consumption is 7.6 mW. The die area is 0.503 × 0.36 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1359–1362, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26854

This article presents a new low-voltage n-core quadrature voltage-controlled oscillator (QVCO), which consists of two low-voltage n-core cross-coupled voltage-controlled oscillators (VCOs) with two injection MOSFETs in shunt with inductors used for inductive voltage boosting, and the QVCO coupling mechanism is the injection locking.The proposed CMOS QVCO has been implemented with the TSMC 0.18 μm CMOS technology, and the die area is 0.86 × 0.75 mm2. At the supply voltage of 0.7 V, the total power consumption is 0.847 mW. The free-running frequency of the QVCO is tunable from 4.44 to 5.25 GHz, as the tuning voltage is varied from 0.0 to 0.7 V. The measured phase noise at 1 MHz frequency offset is −118.21 dBc/Hz at the oscillation frequency of 4.615 GHz, and the figure of merit of the proposed QVCO is −192.91 dBc/Hz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1170–1173, 2012

A high-performance quadrature voltage-controlled oscillator (QVCO) with ring inductor is studied. The QVCO uses a closed-loop ring inductor and is composed of two complementary negative transconductance cells to replenish the energy loss due to the resistive LC resonator and is implemented in a standard TSMC 90 nm 1P9M CMOS technology. This QVCO operates between 7.05 and 8.15 GHz. The measured phase noise of the VCO operating at 8.15 GHz is −119.98 dBc/Hz at 1-MHz offset while the QVCO draws 4.2 mA and 3.57 mW consumption from a supply voltage of 0.85 V. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:839–842, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26714

Parallel forward-reverse Schottky-diode paths and a L-type attenuator form a bias-free predistorter that effectively reduces the intermodulation distortion of an RF power amplifier.The predistorter exhibits a constant insertion loss at the low input power and its insertion loss decreases when the input power increases. The resistor in the L-type attenuator serves as the transmission path when the input power is small. When the input power is large, on the other hand, the diode paths are activated to serve as the linearization vehicle for the predistorter. An improvement of extended operating power level up to 5 dB with the limit of −30 dBm adjacent-channel leakage power is obtained for a 5-watt amplifier at 1.9 GHz. Measured results are presented to illustrate the effectiveness of the predistorter. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:920–923, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26712

This letter proposes a BiCMOS voltage-controlled oscillator (VCO), which was implemented in the standard TSMC 0.18 μm SiGe 3P6M BiCMOS process. The VCO consists of an nMOSFET cross-coupled oscillator stacked in series with source degenerated HBT diodes. SiGe HBT has an inherently low flicker noise compared to CMOS devices. At the supply voltage of 1.5 V, the output phase noise of the VCO is −122.01 dBc/Hz at 1 MHz offset frequency from the carrier frequency of 5.6 GHz, and the figure of merit is −190.43 dBc/Hz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:605–608, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26619

In this letter, a new LC-ring quadrature voltage-controlled oscillator (QVCO) is proposed. The proposed 0.18-μm CMOS QVCO uses a new composite LC resonator, and it occupies the die area of 0.61 × 0.95 mm2. At the supply voltage of 1.2 V, the total power consumption is 3.7 mW. The free-running frequency of the QVCO is tunable from 3.86 to 4.22 GHz as the tuning voltage is varied from 0.0 to 1.2 V. The measured phase noise at 1 MHz frequency offset is −123.42 dBc/Hz at the oscillation frequency of 3.94 GHz and the figure of merit of the proposed QVCO is −190.38 dBc/Hz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 54:474–477, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26549

A high operation frequency multimodulus injection locked frequency divider (ILFD) has been proposed and it is based on a cross-coupled voltage-controlled oscillator with the parallel-injection heterojunction bipolar transistors (HBTs), and was fabricated in the 0.35 μm silicon-germanium (SiGe) 3P3M BiCMOS technology. The die area is 0.82 × 0.748 mm2. The metal-oxide-semicondcutor (MOS) varactor is used to tune the frequency range and operation range. The ILFD has wide divide-by-3 locking range due to the parallel injection HBTs with an inductive boosted source voltage. When the supply voltage VCC is 1.2 V and the tuning voltage of the free-running ILFD is tuned from 0 to 1.2 V, the divider's free-running oscillation frequency is tunable from 6.21 to 7.379 GHz, and at the incident power of 0 dBm the divide-by-3 operation range is 2.7 GHz, continuously from the incident frequency 19.2 to 21.9 GHz. The divide-by-3 locking range is 0.8 GHz, from the incident frequency 20.9 to 21.7 GHz. The divide-by-2 locking range is 0.8 GHz, from the incident frequency 15.2 to 16.0 GHz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:379–383, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26593

This article proposes a dual-resonance CMOS LC-tank injection-locked frequency doubler (ILFD) fabricated in the 0.18 μm CMOS process and describes the circuit design, operation principle, and measurement results of the ILFD. The ILFD circuit is composed of a dual-resonance first-harmonic injection-locked oscillator with dual-injection ports, a wide-band frequency doubler, and a transformer balun. At the supply voltage of 0.7 V, the dc power consumption is 5.39 mW. At the incident power of 0 dBm, the ILFD has high/low operation range from the incident frequency 3.9/1.7 to 6.1/2 GHz to provide a dual-band signal source with the frequency 7.8/3.4–12.2/4 GHz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:193–196, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26501

This article presents a new quadrature voltage-controlled oscillator (QVCO). The LC-tank QVCO consists of two first-harmonic injection-locked oscillators (ILOs). The outputs of one ILO are injected to the gates of the MOS transistors on the other ILO and vice versa so as to force the two local oscillator (LOs) operate in quadrature. The injection metal-oxide-semiconductor field-effect transistors (MOSFETs) are also used as frequency tuning varactors. The QVCO has been implemented with the Taiwan Semiconductor Manufacture Company (TSMC) 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology and the die area is 0.646 mm × 0.841 mm. At the supply voltage of 1.3 V, the total power consumption is 9.58 mW. The free-running frequency is tunable from 5.44 to 5.95 GHz as the tuning voltage is varied from 0.2 to 2.0 V. The measured phase noise at 1 MHz offset is −121.52 dBc/Hz at the oscillation frequency of 5.91 GHz and the figure of merit (FOM) of the proposed QVCO is about −187.14 dBc/Hz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2631–2634, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26363

This article presents a differential cross-coupled complementary Colpitts CMOS voltage-controlled oscillator (VCO).The low phase noise CMOS VCO has been implemented with the TSMC 0.35-μm 2P4M CMOS technology and adopts a pair of cross-coupled PMOS transistors to achieve faster start-up oscillation. The VCO operates from 6.16 to 6.5 GHz with 5.3% tuning range. The measured phase noise at 1 MHz offset is −121.12 dBc/Hz at 6.417 GHz. The power consumption of the VCO core is 6.16 mW. The figure of merit is −189.37 dBc/Hz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26192

This letter proposes a dual-band divide-by-2 transformer-coupled quadrature injection-locked frequency divider (QILFD).The QILFD is composed of a transformer-coupled quadrature voltage controlled oscillator and two injection MOSFETs. The CMOS QILFD has been implemented with the Taiwan Semiconductor Manufacture Company (TSMC) 0.18 μm CMOS technology, and the core power consumption is 3.997 mW at the supply voltage of 0.7 V. The tank impedance of the QILFD shows a dual resonance behavior, which leads to a dual-band locking range at a fixed bias condition. At the injection input power of 3 dBm, the low-band and high-band divide-by-2 locking ranges are from 6.90 to 8.56 GHz and 9.52 to 12.10 GHz, respectively. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26074

This letter proposes a CMOS injection-locked frequency divider (ILFD) fabricated in a 0.35-μm CMOS process.The ILFD circuit is realized with a cross-coupled CMOS LC-tank oscillator, and the external injection is carried out through the gate of a waffle MOSFET. The self-oscillating ILFD is injection-locked by second-/fourth-harmonic input to obtain the division order of two/four. Measurement results show that at the supply voltage of 0.9 V and at the incident power of 0 dBm, the locking range is from the incident frequency 4.25 to 6.35 GHz in the divide-by-2 mode. The locking range is from the incident frequency 10.75 to 11.25 GHz in the divide-by-4 mode. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26064

A gm-boosted complementary Colpitts differential voltage-controlled oscillator (VCO) is proposed and implemented in a 0.18-μm CMOS 1P6M process.It consists of two single-ended p-core Colpitts oscillators via gm-enhanced cross-coupled Colpitts transistors to obtain a differential output. At the supply voltage of 1.45 V, the output phase noise of the differential VCO is −119.2 dBc/Hz at 1 MHz offset frequency from the carrier frequency of 8.69 GHz, and the figure of merit is −190.2 dBc/Hz. Total VCO core power consumption is 5.99 mW. Tuning range is 1.01 GHz, from 8.69 to 9.7 GHz, while the control voltage was tuned from 0 to 2.0 V. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:1183–1186, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25934

This letter proposes a wide-locking range injection-locked frequency oscillator (ILO) fabricated in the 0.35 μm SiGe 3P3M BiCMOS technology. The divider consists of a hetero-junction bipolar transistor (HBT) cross-coupled LC oscillator and two injection HBTs in series with the cross-coupled HBTs. The HBT injectors and coupling transformers are regarded a voltage-to-voltage convection device to supply injection voltage to one port of mixer's input. At the supply voltage of 1.2 V, the free-running frequency is from 6.8 to 7.43 GHz, the current and power consumption of the divider without buffers are 9.4 mA and 11.28 mW, respectively. At the incident power of 0 dBm, the total operational locking range of the ILO used as a divide-by-3 frequency divider is from the incident frequency 20.3 to 23.1 GHz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:734–737, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25821

A 7-GHz NMOS Armstrong cross-coupled voltage-controlled oscillator (VCO) is designed and implemented in a 0.18 μm CMOS one-poly six-metal (1P6M) process. The differential VCO uses two single-ended Armstrong oscillators coupled via a pair of cross-coupled transistors and a pair of varactors, and it also uses the self-injection locking technique to reduce the phase noise. At the dc drain-source voltage of 0.6 V, the output phase noise of the VCO is −110.9 dBc/Hz at 1-MHz offset frequency from the carrier frequency of 7.45 GHz and the figure of merit is −186.26 dBc/Hz. Total VCO core power consumption is 1.614 mW. Tuning range is 1.16 GHz, from 6.42 to 7.58 GHz, while the control voltage was tuned from 0 to 2 V. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:728–731, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25826

A fourth order resonator has been implemented to design an injection locked frequency divider (ILFD) implemented in a 0.18-μm CMOS process. The ILFD is realized with a cross-coupled nMOS LC-tank oscillator with a direct injection MOSFET and two series-LC resonators. At the supply voltage of 0.8 V, the low-band free-running tuning frequency is from 2.7 to 3.18 GHz. One excited high-band frequency band is measured, and the free-running tuning frequency is from 4.07 to 4.13 GHz. The divide-by-2 operational locking range is from 3.4 to 9.4 GHz, and the divide-by-4 operational locking range is from 10.5 (15.95) GHz to 13.6 (16.9) GHz for the low-(high)-frequency band. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:290–293, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25716

A fourth order resonator has been implemented to design an injection locked frequency divider (ILFD) implemented in a 0.35-μm SiGe 3P3M BiCMOS process. The ILFD is realized with a cross-coupled HBT LC-tank oscillator with switched varactor bias for frequency band selection. The LC tank is a 4th order resonator and it can operate with two tunable frequency bands. Measurement results show that at the supply voltage of 1.25 V, the free-running frequency can be from 3.22 (6.76) to 3.41 (7.53) GHz for the low-(high-) frequency band. The divide-by-2 operational locking range can be from 6.3 (12.8) to 6.95 (15.3) GHz for the low-(high-) frequency band. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2762–2765, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25586

This letter proposes a divide-by-3 frequency divider employing the linear mixer topology; the divider was fabricated in the 0.35-μm CMOS 2P4M CMOS technology. The divider consists of an nMOS cross-coupled LC oscillator and two injection MOSFETs in series with the cross-coupled nMOSFETs. At the drain bias voltage of 1.2 V, the divider free-running frequency is tunable from 3.73 to 3.92 GHz, and at the incident power of 0 dBm, the operational locking range is about 0.69 GHz, from the incident frequency 10.99 to 11.68 GHz. The core power consumption is 6.9 mW. The die area is 0.83 × 0.94 mm2. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2740–2743, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25597

A new differential voltage-controlled oscillator (VCO) is designed and implemented in a 0.13-μm CMOS 1P8M process. The designed circuit topology is an n-core LC-tank VCO with an LC resonator. At the supply voltage of 1.1 V, the output phase noise of the VCO is −113.8 dBc/Hz at 1-MHz offset frequency from the carrier frequency of 11.73 GHz and the figure of merit is −192.01 dBc/Hz. The core power consumption is 1.83 mW. Tuning range is 1.47 GHz from 10.66 to 12.13 GHz, while the control voltage was tuned from 0 to 1.2 V. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2170–2173, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25466