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We present a compact, filtering power divider (FPD) using integrated passive device technology (IPD) for mm‐wave applications. Our proposed FPD design integrates quarter‐wavelength coupled‐resonator bandpass filters with a Wilkinson power divider, using size reduction techniques. Coupled coplanar waveguides provide excellent coupling while occupying a small area, and metal‐insulator‐metal capacitors offer the required λ/4 phase shift without length extension. The center frequency of the filtering power divider/combiner (FPD/C) is located at 30‐GHz. We demonstrate our FPD design by fabricating four prototypes with parameter variations. The insertion loss, fractional bandwidth, and size of the FPD/C designed in this study are from 2.56 to 3.3 dB, from 9.67% to 19.4%, and from 0.592 to 0.220‐mm2, respectively. In addition, the return loss of all models at the center frequency is 28.5 dB or more, and the isolation is 16.6 dB or more. [ABSTRACT FROM AUTHOR]

This study presents a compact, wideband, 4 × 4 Butler matrix using a two‐metal‐layer thin‐film process for millimeter (mm)‐wave 5G radio applications. Size reduction techniques are thoroughly discussed for size and performance optimization. A size‐reduced quadrature coupler is designed with coplanar waveguide based length‐reduced branch lines using capacitive loading effect from the ground bridges. A compact crossover is designed for a return loss of 20 dB or more with negligible crosstalk over a wide frequency range. The circuit components are arranged in an optimized space, allowing negligible coupling between nearby elements. The Butler matrix is fabricated on a quartz substrate at the center frequency of 28 GHz. The fractional bandwidth is 15.4% at a 15‐dB return loss and insertion loss is measured in the range of 7.8–8.7 dB at the center frequency. The size of the core circuit is 3.375 × 2.100 mm2 ${\rm{m}}{{\rm{m}}}^{2}$, which corresponds to 0.469 × 0.292 λg2 ${\lambda }_{g}^{2}$. [ABSTRACT FROM AUTHOR]

In this paper, a novel miniaturized planar antipodal Vivaldi antenna (AVA) with high gain and back radiation reduction for 5G millimeter‐wave (mm‐Wave) communication is presented. First, due to the use of the gradual corrugated edges (GCE), the operating band of the antenna is extended in the direction of lower frequencies and the overall gain is also improved as well. Second, its gain of the antenna is better enhanced at the high frequency band through I‐Shape Metal Director (IMD). Lastly, to further reduce the back radiation, the split ring resonance branches (SRB) are added to the ground. The antenna front‐back ratio has improved considerably to over 20 dB. Meanwhile the antenna gain is improved further. Furthermore, a prototype antenna array was fabricated and the measurement results clearly show that the antenna array gain varies in the range of 15.86–16.43 dB when operating in the 5G millimeter wave band (24.75–28.35 GHz). [ABSTRACT FROM AUTHOR]

A new scalable small‐signal model for 0.1 μm AlGaN/GaN HEMT up to 110 GHz is presented in this paper. The taps between the gate/drain manifold and fingers on the device has been investigated and included in the equivalent circuit. In addition, to ensure high scalability, a set of scaling rules are presented. A novel extraction procedure for extrinsic capacitances using full‐wave electromagnetic (FW‐EM) method has been introduced along with corresponding structures used for EM simulation. The nonlinear dependence of the extrinsic inductances on the gate‐width has been accounted for by a new scaling rule, which can be used to extract their value from measurement data. To guarantee the stability of the scaling coefficients, two devices with different gate‐width have been utilized for their generation. The proposed scalable model has been verified using 0.1 μm AlGaN/GaN HEMT devices with different gate‐widths and different gate‐fingers. The experiment results show good agreement between model and measurement S‐parameters up to 110 GHz. [ABSTRACT FROM AUTHOR]

A wideband high‐gain mm‐Wave antenna array operating in Ka‐band is reported. The antenna element consists of an antipodal Vivaldi antenna (AVA) with plated through vias on the edges of the radiating arms, which is utilized to eliminate the harmful gap resonance due to the electrically discontinuity. A modified wideband 8‐way substrate integrated waveguide (SIW) power divider is proposed to feed the linear array. In addition, in order to enhance antenna gain, a stacked dielectric superstrate is employed, which achieves 2.3 dBi average gain improvement over 25‐40 GHz. The proposed structure provides superior bandwidth of 25.4‐40 GHz with S11 < −9.5 dB (corresponding to VSWR < 2). The modified SIW power divider, 1 × 8 AVA array and the dielectric superstrate are designed and fabricated, resulting in a wideband and high‐gain structure as compared to other SIW‐fed antennas. A prototype is experimentally verified. The measured results show that the impedance bandwidth ranges from 25.37 to 39.48 GHz (S11 < −9.6 dB, relative bandwidth of 43%). The measured gain varies from 15.5 to 18.5 dBi in the frequency range with an average gain of 16.6 dBi. [ABSTRACT FROM AUTHOR]

This paper reports on the first demonstration of an experimental millimeter‐wave (mm‐wave) beamforming based on the conformal Rotman lens. The passive switched‐beam network is intended for operation in the 28‐GHz band, covering the 18‐38 GHz range, for the deployment in the fifth generation (5G) subsystems. The primary objective of this work is to conduct the feasibility of designing a beamforming network (BFN) based on the liquid‐crystal polymer substrate, and to evaluate the performances in terms of the scattering (S)‐parameters and surface currents for the proposed flexural case of the convex‐circumferential bending. A prototype has been accurately fabricated, and a setup has also been deployed to conduct the measurements. The performance in terms of the linear progressive phase behavior, as the main figure of merit, has been shown. The BFN exhibits significant characteristics to be used as a low‐profile unit of the transceivers with the in‐built beam steering for the conformal 5G subsystems. [ABSTRACT FROM AUTHOR]

Abstract: In this work, a 4G/5G multiple‐input multiple‐output (MIMO) antenna system is presented for smart phone applications. The 4G antenna operates from 1900 to 3212 MHz and 3517 to 3712 MHz with 1312 (69%) and 195 (5.5%) MHz measured bandwidths, respectively. The 5G antenna covers 25.7–30.50 GHz band with 4.8 GHz (18.7%) measured bandwidth. The 4G MIMO antenna system is based on 4‐element wideband monopoles, while the 5G one is based on 2‐element linear connected arrays (LCA). Four slots are etched to improve the isolation between the 4G MIMO antenna elements and then a 4 × 1 power divider/combiner is used to excite two of these slots to act as a LCA at mm‐waves. The concept of dual function ground slots is very useful to implement 4G and 5G MIMO antenna systems on the single substrate. The proposed design is fabricated on RO4350B substrate with a height of 0.76 mm and dielectric constant of 3.5. The overall size of the substrate is 115 × 65 × 0.76 mm3. The integrated wideband 4G/5G antenna system is a compact, low profile, and suitable for future smart phone applications. Isolation obtained was at least 15 dB and the envelope correlation coefficient (ECC) values did not exceed 0.16 between all elements. [ABSTRACT FROM AUTHOR]

A U-shaped antenna is printed on polytetrafluoroethylene film, deposited on a copper base having air cavity inside, using thin film micro-strip technology. This antenna is as compact as the rectangular patch and covers the 51.5-62 GHz band. Unlike the silicon substrate, its metallic support yields better radiation patterns. [ABSTRACT FROM AUTHOR]

ABSTRACT This article presents a 60 GHz low insertion loss double-pole double-throw (DPDT) switch implemented in 65 nm standard CMOS process. To achieve the low insertion loss, various techniques are used such as the double-well body-floating, gate-floating, high-performance thin-film microstrip line, resonating the capacitance of the off-state transistor, and the transmission line based matching network. To achieve both high performance and small area, EM simulations are intensely performed to model passive components. The DPDT switch achieves insertion loss of less than 2.7 dB, and return loss of better than 10 dB over the 52-66 GHz band. The measured IIP3 is 18 dBm (simulated IP1dB is 11.4 dBm). The fabricated DPDT switch has an effective area of 0.073 mm2. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:2864-2867, 2014 [ABSTRACT FROM AUTHOR]

ABSTRACT This article presents the design and implementation of a differential 4-way power-combining amplifier operating at E-band. The proposed 4-way power combiner facilitates short interconnects to the power amplifier (PA) cells, thereby resulting in reduced loss. Simple C-L-C and L-C networks are deployed to compensate inductive loading due to the routing lines that would otherwise introduce mismatch and subsequently increase overall loss. Realized in SiGe technology, the PA prototype delivered 13.2 dBm output-referred 1-dB compression point and 14.3 dBm saturated output power when operated from a single 3.3 V DC supply at 75 GHz. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1764-1770, 2014 [ABSTRACT FROM AUTHOR]

The letter highlights the importance of modeling the phase noise of an oscillator using the impulse sensitivity function. A Colpitts oscillator in the common collector configuration is analyzed to obtain an expression for its phase noise. The oscillator design is thus optimized for phase noise with respect to process and design parameters. The fabricated voltage-controlled oscillator at an oscillating frequency of 52.8 GHz has a measured phase noise of −98.9° dBc/Hz at 1 MHz offset. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:290-295, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27320 [ABSTRACT FROM AUTHOR]

In this article, we present a V-band low-phase-noise oscillator stabilized by a silicon integrated cavity resonator (SiCR). The SiCR is realized in a multi chip module-deposited thin-film technology platform. The high resistivity silicon substrate is thinned to 100 μm and through silicon vias are available. The resonator is formed by a double row of through silicon vias defining a TM010 cylindrical cavity resonator. The area on top of the resonator is reused for flip-chip mounting the active device, a MMIC chip realized in BiCMOS technology, implementing SiGe heterojunction bipolar transistors. A lower phase noise is demonstrated for the oscillator using SiCR in comparison with an idle oscillator using the same active device but a shorted CPW line as resonator. In the best case, the phase-noise of the oscillator with SiCR is reduced to −102 dBc/Hz at 1-MHz carrier offset, fosc = 54 GHz, from −89 dBc/Hz at 1 MHz carrier offset, fosc = 47.3 GHz, corresponding to the idle oscillator, using the CPW resonator. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1788-1792, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26946 [ABSTRACT FROM AUTHOR]

The high interdevice isolation levels is one of the key technologies in the design and fabrication of 60-GHz WPAN SoC. To obtain proper interdevice isolation levels, we have analyzed and measured substrate coupling effects with various isolation techniques like a trench and implant structure. From the analyzed and measured results, the feasibility of the implant has confirmed to be applicable to the mm-wave SoC, and also derived an equivalent circuit form these results, which can be helpful to the design and fabrication of the 60-GHz WPAN SoC. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1699–1702, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23470 [ABSTRACT FROM AUTHOR]