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On-chip high-frequency frequency sources suffer from quality (Q)-factor degradation of varactors.Injection-locked frequency multipliers allow the design of oscillators running at a frequency lower than required to take the advantage of higher Q-factor varactor. This article proposes a fully integrated CMOS LC-tank injection-locked frequency quadrupler fabricated in the TSMC 90 nm RF-CMOS process and describes the circuit design, operation principle, and measurement results of the quadrupler. The injection-locked frequency quadrupler comprises a first-harmonic injection-locked oscillator with dual-injection ports, two frequency doublers and a transformer balun. At the supply voltage of 0.7 V, the dc power consumption is 9.1 mW. At the incident power of 0 dBm, the injection-locked frequency quadrupler can provide an output signal with the frequency from 24 to 29.6 GHz, while the frequency of the injection signal varies from 6 to 7.4 GHz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:266-269, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27291 [ABSTRACT FROM AUTHOR]

A diode-ring coupling technique has been used to design quadrature voltage-controlled oscillators (QVCOs), which consist of two n-core VCOs.The proposed CMOS QVCOs have been implemented with the TSMC 0.18 μm CMOS technology. A single-band and a dual-band QVCOs have been implemented to support the feasibility of the coupling technique. The die area of the single-band QVCO is 0.506 × 0.905 mm. At the supply voltage of 0.54 V, the total power consumption is 1.78 mW. The free-running frequency of the QVCO is tunable from 4.295 to 5.185 GHz as the tuning voltage is varied from 0.0 to 1.1 V. The measured phase noise at 1 MHz frequency offset is −114 dBc/Hz at the oscillation frequency 4.587 GHz, and the figure of merit of the proposed QVCO is −184.73 dBc/Hz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:551-553, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25774 [ABSTRACT FROM AUTHOR]

This article presents a fully integrated quadrature cross-coupled voltage controlled oscillator (QVCO) using common-drain transistor instead of common-source transistor as a coupling device.The prototype 3.8 GHz QVCO in 0.18 μm CMOS process is proposed to generate four output phases and it uses two p-core cross-coupled VCOs and nMOS coupling devices. The proposed QVCO oscillates from 3.6 to 3.84 GHz and the power consumption is 7.24 mW at 0.74 V supply voltage. The measured phase noise is -126.19 dBc/Hz at 1 MHz offset frequency from the carrier frequency 3.745 GHz. The VCO occupies a chip area of 1.08 ×0.924 mm2 and provides a figure of merit of -189.05 dBc/Hz. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1262-1266, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27578 [ABSTRACT FROM AUTHOR]

A dual-resonance balanced voltage-controlled oscillator (VCO) is proposed to serves as a dual-band oscillator operated at 3.5 and 8.5 GHz. The VCO consists of two single-ended dual-resonance LC-tank complementary Colpitts oscillators configured in a balanced topology. The proposed VCO has been implemented with the TSMC 0.18 μm 1P6M CMOS technology and the core power consumption is 4.21 mW at the supply voltage of 1.2 V. The figure of merit is −190.22/−190.3 dBc/Hz at high/low band. The die area of the dual-band VCO is 0.995 × 0.55 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:194-197, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27234 [ABSTRACT FROM AUTHOR]

This article presents a differential cross-coupled complementary Colpitts CMOS voltage-controlled oscillator (VCO).The low phase noise CMOS VCO has been implemented with the TSMC 0.35-μm 2P4M CMOS technology and adopts a pair of cross-coupled PMOS transistors to achieve faster start-up oscillation. The VCO operates from 6.16 to 6.5 GHz with 5.3% tuning range. The measured phase noise at 1 MHz offset is −121.12 dBc/Hz at 6.417 GHz. The power consumption of the VCO core is 6.16 mW. The figure of merit is −189.37 dBc/Hz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26192 [ABSTRACT FROM AUTHOR]

This letter proposes a dual-band divide-by-2 transformer-coupled quadrature injection-locked frequency divider (QILFD).The QILFD is composed of a transformer-coupled quadrature voltage controlled oscillator and two injection MOSFETs. The CMOS QILFD has been implemented with the Taiwan Semiconductor Manufacture Company (TSMC) 0.18 μm CMOS technology, and the core power consumption is 3.997 mW at the supply voltage of 0.7 V. The tank impedance of the QILFD shows a dual resonance behavior, which leads to a dual-band locking range at a fixed bias condition. At the injection input power of 3 dBm, the low-band and high-band divide-by-2 locking ranges are from 6.90 to 8.56 GHz and 9.52 to 12.10 GHz, respectively. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26074 [ABSTRACT FROM AUTHOR]

This letter proposes a CMOS injection-locked frequency divider (ILFD) fabricated in a 0.35-μm CMOS process.The ILFD circuit is realized with a cross-coupled CMOS LC-tank oscillator, and the external injection is carried out through the gate of a waffle MOSFET. The self-oscillating ILFD is injection-locked by second-/fourth-harmonic input to obtain the division order of two/four. Measurement results show that at the supply voltage of 0.9 V and at the incident power of 0 dBm, the locking range is from the incident frequency 4.25 to 6.35 GHz in the divide-by-2 mode. The locking range is from the incident frequency 10.75 to 11.25 GHz in the divide-by-4 mode. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26064 [ABSTRACT FROM AUTHOR]

A wide-band ÷3 injection locked frequency divider (ILFD) has been proposed, and it is based on a single-stage voltage-controlled oscillator with active-inductor and HBT diodes, and was fabricated in the 0.35 μm silicon-germanium 3P3M BiCMOS technology. The ILFD has wide operation range and was performed by injecting a differential signal to the bases of the injection HBTs. At the supply voltage V = 1.8 V, the oscillation frequency of the ILFD with two tuning voltages is tunable from 4.17 to 2.12 GHz, and at the incident power of 0 dBm, the ÷3 operation range is 5.93 GHz, from the incident frequency 6.3 to 12.23 GHz. The die area is 0.59 × 0.63 mm. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:609-611, 2011; View this article at wileyonlinelibrary.com. DOI 10.1002/mop.25771 [ABSTRACT FROM AUTHOR]

A dual-band cross-coupled oscillator is proposed to operate at 5 and 9 GHz. The oscillator consists of two cross-coupled BiCMOS oscillators with shared series-tuned LC-tank. In the even-mode, the series-tuned LC-tank takes no part in affecting the oscillation frequency, whereas in the odd-mode, the series-tuned LC-tank plays the role in the oscillation frequency. The proposed oscillator has been implemented with the TSMC 0.18 μm SiGe BiCMOS technology and the core power consumption is 2.6 mW at the supply voltage of 0.7 V. The figure of merit is −192/−190 dBc/Hz at high-/low-band. The die area of the dual-band VCO is 1.04 × 0.755 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:485-488, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27368 [ABSTRACT FROM AUTHOR]