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A dual-band cross-coupled oscillator is proposed to operate at 5 and 9 GHz. The oscillator consists of two cross-coupled BiCMOS oscillators with shared series-tuned LC-tank. In the even-mode, the series-tuned LC-tank takes no part in affecting the oscillation frequency, whereas in the odd-mode, the series-tuned LC-tank plays the role in the oscillation frequency. The proposed oscillator has been implemented with the TSMC 0.18 μm SiGe BiCMOS technology and the core power consumption is 2.6 mW at the supply voltage of 0.7 V. The figure of merit is −192/−190 dBc/Hz at high-/low-band. The die area of the dual-band VCO is 1.04 × 0.755 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:485-488, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27368 [ABSTRACT FROM AUTHOR]

On-chip high-frequency frequency sources suffer from quality (Q)-factor degradation of varactors.Injection-locked frequency multipliers allow the design of oscillators running at a frequency lower than required to take the advantage of higher Q-factor varactor. This article proposes a fully integrated CMOS LC-tank injection-locked frequency quadrupler fabricated in the TSMC 90 nm RF-CMOS process and describes the circuit design, operation principle, and measurement results of the quadrupler. The injection-locked frequency quadrupler comprises a first-harmonic injection-locked oscillator with dual-injection ports, two frequency doublers and a transformer balun. At the supply voltage of 0.7 V, the dc power consumption is 9.1 mW. At the incident power of 0 dBm, the injection-locked frequency quadrupler can provide an output signal with the frequency from 24 to 29.6 GHz, while the frequency of the injection signal varies from 6 to 7.4 GHz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:266-269, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27291 [ABSTRACT FROM AUTHOR]