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A dual-band cross-coupled oscillator is proposed to operate at 5 and 9 GHz. The oscillator consists of two cross-coupled BiCMOS oscillators with shared series-tuned LC-tank. In the even-mode, the series-tuned LC-tank takes no part in affecting the oscillation frequency, whereas in the odd-mode, the series-tuned LC-tank plays the role in the oscillation frequency. The proposed oscillator has been implemented with the TSMC 0.18 μm SiGe BiCMOS technology and the core power consumption is 2.6 mW at the supply voltage of 0.7 V. The figure of merit is −192/−190 dBc/Hz at high-/low-band. The die area of the dual-band VCO is 1.04 × 0.755 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:485-488, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27368 [ABSTRACT FROM AUTHOR]

This article presents a differential cross-coupled complementary Colpitts CMOS voltage-controlled oscillator (VCO).The low phase noise CMOS VCO has been implemented with the TSMC 0.35-μm 2P4M CMOS technology and adopts a pair of cross-coupled PMOS transistors to achieve faster start-up oscillation. The VCO operates from 6.16 to 6.5 GHz with 5.3% tuning range. The measured phase noise at 1 MHz offset is −121.12 dBc/Hz at 6.417 GHz. The power consumption of the VCO core is 6.16 mW. The figure of merit is −189.37 dBc/Hz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26192 [ABSTRACT FROM AUTHOR]

This letter proposes a dual-band divide-by-2 transformer-coupled quadrature injection-locked frequency divider (QILFD).The QILFD is composed of a transformer-coupled quadrature voltage controlled oscillator and two injection MOSFETs. The CMOS QILFD has been implemented with the Taiwan Semiconductor Manufacture Company (TSMC) 0.18 μm CMOS technology, and the core power consumption is 3.997 mW at the supply voltage of 0.7 V. The tank impedance of the QILFD shows a dual resonance behavior, which leads to a dual-band locking range at a fixed bias condition. At the injection input power of 3 dBm, the low-band and high-band divide-by-2 locking ranges are from 6.90 to 8.56 GHz and 9.52 to 12.10 GHz, respectively. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26074 [ABSTRACT FROM AUTHOR]