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In this paper, we first build the 3D model of coaxial TSV(CTSV), RDL, and bump of the CTSV interconnect, and extract the equivalent circuit model of each part. Then, we get the S-parameters of the 3D and equivalent circuit model of the CTSV interconnect structure; the validity of the equivalent circuit model is verified by comparing the consistency of the S-parameters. The simulation results show that the maximum errors for the S11 and S21 parameters are 0.4% and 0.18%, respectively, which proves the validity of the equivalent circuit modeling in this paper. Finally, parametric analysis is performed to investigate the effect of different model parameters on the signal-transmission characteristics of the CTSV interconnect. [ABSTRACT FROM AUTHOR]

A frequency up-conversion piezoelectric energy harvester (FUC-PEH) consists of a force amplifier, a piezoelectric stack, a low-frequency oscillator (LFO), and a stop limiter. The force amplifier generates the amplification of stress on the piezoelectric stack. The LFO, comprising a spring and a mass block, impacts the stop limiter during vibration to induce high-frequency oscillations within the piezoelectric stack. In this paper, we represent and simplify the FUC-PEH as a lumped-parameter model based on piezoelectric material constitutive equations and structural dynamic theories. Using the electromechanical analogy, we developed an equivalent circuit model (ECM) of the FUC-PEH. A parametric study was performed to investigate the impact of system parameters, such as spring stiffness and concentrated mass, on the FUC-PEH performance. The collision-induced amplitude truncation (AT) effect enlarges the operation bandwidth. ECM simulations show that low-frequency input excitation is converted into a high-frequency output response, enhancing the energy conversion efficiency. Furthermore, we aimed to improve the FUC-PEH's performance using a synchronous electric charge extraction (SECE) circuit. Using the ECM approach, we established a system-level model that considers the electromechanical coupling behavior. The simulation results provide insights into the performance of FUC harvesters with SECE circuits and offer valuable design guidance. [ABSTRACT FROM AUTHOR]

In this paper, we first build the 3D model of coaxial TSV(CTSV), RDL, and bump of the CTSV interconnect, and extract the equivalent circuit model of each part. Then, we get the S-parameters of the 3D and equivalent circuit model of the CTSV interconnect structure; the validity of the equivalent circuit model is verified by comparing the consistency of the S-parameters. The simulation results show that the maximum errors for the S11 and S21 parameters are 0.4% and 0.18%, respectively, which proves the validity of the equivalent circuit modeling in this paper. Finally, parametric analysis is performed to investigate the effect of different model parameters on the signal-transmission characteristics of the CTSV interconnect.

A frequency up-conversion piezoelectric energy harvester (FUC-PEH) consists of a force amplifier, a piezoelectric stack, a low-frequency oscillator (LFO), and a stop limiter. The force amplifier generates the amplification of stress on the piezoelectric stack. The LFO, comprising a spring and a mass block, impacts the stop limiter during vibration to induce high-frequency oscillations within the piezoelectric stack. In this paper, we represent and simplify the FUC-PEH as a lumped-parameter model based on piezoelectric material constitutive equations and structural dynamic theories. Using the electromechanical analogy, we developed an equivalent circuit model (ECM) of the FUC-PEH. A parametric study was performed to investigate the impact of system parameters, such as spring stiffness and concentrated mass, on the FUC-PEH performance. The collision-induced amplitude truncation (AT) effect enlarges the operation bandwidth. ECM simulations show that low-frequency input excitation is converted into a high-frequency output response, enhancing the energy conversion efficiency. Furthermore, we aimed to improve the FUC-PEH’s performance using a synchronous electric charge extraction (SECE) circuit. Using the ECM approach, we established a system-level model that considers the electromechanical coupling behavior. The simulation results provide insights into the performance of FUC harvesters with SECE circuits and offer valuable design guidance.

In this study, we present a novel dual-polarized patch antenna that exhibits high isolation and two in-band transmission zeros (TZs). The design consists of a suspended metal patch, two feeding probes connected to an internal neutralization line (I-NL), and a T-shaped decoupling network (T-DN). The I-NL is responsible for generating the first TZ, and its decoupling principles are explained through an equivalent circuit model. Rigorous design formulas are also derived to aid in the construction of the feeding structure. The T-DN realizes the second TZ, resulting in further improvement of the decoupling bandwidth. Simulation and experimental results show that the proposed antenna has a wide operating bandwidth (2.5–2.7 GHz), high port isolation (>30 dB), and excellent efficiency (>85%). [ABSTRACT FROM AUTHOR]

In this paper, a novel approach is proposed for modeling the temperature-dependent behavior of a surface acoustic wave (SAW) resonator, by using a combination of a lumped-element equivalent circuit model and artificial neural networks (ANNs). More specifically, the temperature dependence of the equivalent circuit parameters/elements (ECPs) is modeled using ANNs, making the equivalent circuit model temperature-dependent. The developed model is validated by using scattering parameter measurements performed on a SAW device with a nominal resonant frequency of 423.22 MHz and under different temperature conditions (i.e., from 0 °C to 100 °C). The extracted ANN-based model can be used for simulation of the SAW resonator RF characteristics in the considered temperature range without the need for further measurements or equivalent circuit extraction procedures. The accuracy of the developed ANN-based model is comparable to that of the original equivalent circuit model. [ABSTRACT FROM AUTHOR]

In this study, we present a novel dual-polarized patch antenna that exhibits high isolation and two in-band transmission zeros (TZs). The design consists of a suspended metal patch, two feeding probes connected to an internal neutralization line (I-NL), and a T-shaped decoupling network (T-DN). The I-NL is responsible for generating the first TZ, and its decoupling principles are explained through an equivalent circuit model. Rigorous design formulas are also derived to aid in the construction of the feeding structure. The T-DN realizes the second TZ, resulting in further improvement of the decoupling bandwidth. Simulation and experimental results show that the proposed antenna has a wide operating bandwidth (2.5–2.7 GHz), high port isolation (>30 dB), and excellent efficiency (>85%).

PDMS (polydimethylsiloxane) is an important soft biocompatible material, which has various applications such as an implantable neural interface, a microfluidic chip, a wearable brain–computer interface, etc. However, the selective removal of the PDMS encapsulation layer is still a big challenge due to its chemical inertness and soft mechanical properties. Here, we use an excimer laser as a cold micro-machining tool for the precise removal of the PDMS encapsulation layer which can expose the electrode sites in an implantable neural interface. This study investigated and optimized the effect of excimer laser cutting parameters on the electrochemical impedance of a neural electrode by using orthogonal experiment design. Electrochemical impedance at the representative frequencies is discussed, which helps to construct the equivalent circuit model. Furthermore, the parameters of the equivalent circuit model are fitted, which reveals details about the electrochemical property of neural electrode using PDMS as an encapsulation layer. Our experimental findings suggest the promising application of excimer lasers in the micro-machining of implantable neural interface. [ABSTRACT FROM AUTHOR]

In this paper, a novel approach is proposed for modeling the temperature-dependent behavior of a surface acoustic wave (SAW) resonator, by using a combination of a lumped-element equivalent circuit model and artificial neural networks (ANNs). More specifically, the temperature dependence of the equivalent circuit parameters/elements (ECPs) is modeled using ANNs, making the equivalent circuit model temperature-dependent. The developed model is validated by using scattering parameter measurements performed on a SAW device with a nominal resonant frequency of 423.22 MHz and under different temperature conditions (i.e., from 0 °C to 100 °C). The extracted ANN-based model can be used for simulation of the SAW resonator RF characteristics in the considered temperature range without the need for further measurements or equivalent circuit extraction procedures. The accuracy of the developed ANN-based model is comparable to that of the original equivalent circuit model.

To realize the real-time measurement of masses of nanoparticles, virus molecules, organic macromolecules, and gas molecules, and to analyze their physical and chemical properties, a ZnO nanowire (NW) resonator operating at room temperature with an ultrahigh resonant frequency, real-time detection, and high precision was designed and developed in this study. The machining method is simple and easy to integrate into an integrated circuit. A closed-loop detection system based on a phase-locked loop (PLL) and frequency modulation technology (FM) was used to perform closed-loop testing of electromagnetically excited ZnO NW. The first-order resonance frequency of the resonator was 10.358 MHz, the quality factor Q value was about 600, the frequency fluctuation value fRMS was about 300 Hz, and the FM range could reach 200 kHz. The equivalent circuit model of the resonator was established, the parasitic parameters during the test were obtained, and the frequency accuracy and phase noise of the resonator were analyzed and tested. The experimental results show that the closed-loop system can automatically control the resonator in a wide range of frequency bands, with good tracking performance of the resonant frequency, small frequency fluctuation, and low phase noise level. [ABSTRACT FROM AUTHOR]

PDMS (polydimethylsiloxane) is an important soft biocompatible material, which has various applications such as an implantable neural interface, a microfluidic chip, a wearable brain–computer interface, etc. However, the selective removal of the PDMS encapsulation layer is still a big challenge due to its chemical inertness and soft mechanical properties. Here, we use an excimer laser as a cold micro-machining tool for the precise removal of the PDMS encapsulation layer which can expose the electrode sites in an implantable neural interface. This study investigated and optimized the effect of excimer laser cutting parameters on the electrochemical impedance of a neural electrode by using orthogonal experiment design. Electrochemical impedance at the representative frequencies is discussed, which helps to construct the equivalent circuit model. Furthermore, the parameters of the equivalent circuit model are fitted, which reveals details about the electrochemical property of neural electrode using PDMS as an encapsulation layer. Our experimental findings suggest the promising application of excimer lasers in the micro-machining of implantable neural interface.

To realize the real-time measurement of masses of nanoparticles, virus molecules, organic macromolecules, and gas molecules, and to analyze their physical and chemical properties, a ZnO nanowire (NW) resonator operating at room temperature with an ultrahigh resonant frequency, real-time detection, and high precision was designed and developed in this study. The machining method is simple and easy to integrate into an integrated circuit. A closed-loop detection system based on a phase-locked loop (PLL) and frequency modulation technology (FM) was used to perform closed-loop testing of electromagnetically excited ZnO NW. The first-order resonance frequency of the resonator was 10.358 MHz, the quality factor Q value was about 600, the frequency fluctuation value fRMS was about 300 Hz, and the FM range could reach 200 kHz. The equivalent circuit model of the resonator was established, the parasitic parameters during the test were obtained, and the frequency accuracy and phase noise of the resonator were analyzed and tested. The experimental results show that the closed-loop system can automatically control the resonator in a wide range of frequency bands, with good tracking performance of the resonant frequency, small frequency fluctuation, and low phase noise level.

Through Silicon Via (TSV) technology is capable meeting effective, compact, high density, high integration, and high-performance requirements. In high-frequency applications, with the rapid development of 5G and millimeter-wave radar, the TSV interposer will become a competitive choice for radio frequency system-in-package (RF SIP) substrates. This paper presents a redundant TSV interconnect design for high resistivity Si interposers for millimeter-wave applications. To verify its feasibility, a set of test structures capable of working at millimeter waves are designed, which are composed of three pieces of CPW (coplanar waveguide) lines connected by single TSV, dual redundant TSV, and quad redundant TSV interconnects. First, HFSS software is used for modeling and simulation, then, a modified equivalent circuit model is established to analysis the effect of the redundant TSVs on the high-frequency transmission performance to solidify the HFSS based simulation. At the same time, a failure simulation was carried out and results prove that redundant TSV can still work normally at 44 GHz frequency when failure occurs. Using the developed TSV process, the sample is then fabricated and tested. Using L-2L de-embedding method to extract S-parameters of the TSV interconnection. The insertion loss of dual and quad redundant TSVs are 0.19 dB and 0.46 dB at 40 GHz, respectively.

In order to improve the fabrication efficiency and performance of an ultrasonic transducer (UT), a particle swarm optimization (PSO) algorithm-based design method was established and combined with an electrically equivalent circuit model. The relationship between the design and performance parameters of the UT is described by an electrically equivalent circuit model. Optimality criteria were established according to the desired performance; then, the design parameters were iteratively optimized using a PSO algorithm. The Pb(ZrxTi1−x)O3 (PZT) ceramic UT was designed by the proposed method to verify its effectiveness. A center frequency of 6 MHz and a bandwidth of −6 dB (70%) were the desired performance characteristics. The optimized thicknesses of the piezoelectric and matching layers were 255 μm and 102 μm. The experimental results agree with those determined by the equivalent circuit model, and the center frequency and −6 dB bandwidth of the fabricated UT were 6.3 MHz and 68.25%, respectively, which verifies the effectiveness of the developed optimization design method.

Interest in autonomous low-power energy sources has risen with the development and widespread use of devices with very low energy consumption. Interest in thermoelectric harvesters has increased against this background. Thermoelectric harvesters, especially harvesters on-chip, have peculiar properties related to the thermal route, thermal transients, and spatial temperature distribution within the chip. A behavioral model of the harvester is required for engineers to successfully develop voltage converters with maximum power point tracking and energy storage units. There are accurate models based on the finite element method, but these models are usually not compatible with simulators of electrical circuits, and therefore are not convenient for designers. Existing equivalent circuit models fit this requirement, but usually do not consider many parameters. This article proposes an original method that allows simulating spatial thermoelectric processes by analogy with the finite difference method, using electrical circuits simulations software. The study proposes a complete methodology for building the model and examples of simulations of one-, two- and three-dimensional problems, as well as examples of simulation of macro problems in the presence of external thermal and electrical devices, such as heatsink and electrical load.

Through Silicon Via (TSV) technology is capable meeting effective, compact, high density, high integration, and high-performance requirements. In high-frequency applications, with the rapid development of 5G and millimeter-wave radar, the TSV interposer will become a competitive choice for radio frequency system-in-package (RF SIP) substrates. This paper presents a redundant TSV interconnect design for high resistivity Si interposers for millimeter-wave applications. To verify its feasibility, a set of test structures capable of working at millimeter waves are designed, which are composed of three pieces of CPW (coplanar waveguide) lines connected by single TSV, dual redundant TSV, and quad redundant TSV interconnects. First, HFSS software is used for modeling and simulation, then, a modified equivalent circuit model is established to analysis the effect of the redundant TSVs on the high-frequency transmission performance to solidify the HFSS based simulation. At the same time, a failure simulation was carried out and results prove that redundant TSV can still work normally at 44 GHz frequency when failure occurs. Using the developed TSV process, the sample is then fabricated and tested. Using L-2L de-embedding method to extract S-parameters of the TSV interconnection. The insertion loss of dual and quad redundant TSVs are 0.19 dB and 0.46 dB at 40 GHz, respectively. [ABSTRACT FROM AUTHOR]

In order to improve the fabrication efficiency and performance of an ultrasonic transducer (UT), a particle swarm optimization (PSO) algorithm-based design method was established and combined with an electrically equivalent circuit model. The relationship between the design and performance parameters of the UT is described by an electrically equivalent circuit model. Optimality criteria were established according to the desired performance; then, the design parameters were iteratively optimized using a PSO algorithm. The Pb(ZrxTi1−x)O3 (PZT) ceramic UT was designed by the proposed method to verify its effectiveness. A center frequency of 6 MHz and a bandwidth of −6 dB (70%) were the desired performance characteristics. The optimized thicknesses of the piezoelectric and matching layers were 255 μm and 102 μm. The experimental results agree with those determined by the equivalent circuit model, and the center frequency and −6 dB bandwidth of the fabricated UT were 6.3 MHz and 68.25%, respectively, which verifies the effectiveness of the developed optimization design method. [ABSTRACT FROM AUTHOR]

Interest in autonomous low-power energy sources has risen with the development and widespread use of devices with very low energy consumption. Interest in thermoelectric harvesters has increased against this background. Thermoelectric harvesters, especially harvesters on-chip, have peculiar properties related to the thermal route, thermal transients, and spatial temperature distribution within the chip. A behavioral model of the harvester is required for engineers to successfully develop voltage converters with maximum power point tracking and energy storage units. There are accurate models based on the finite element method, but these models are usually not compatible with simulators of electrical circuits, and therefore are not convenient for designers. Existing equivalent circuit models fit this requirement, but usually do not consider many parameters. This article proposes an original method that allows simulating spatial thermoelectric processes by analogy with the finite difference method, using electrical circuits simulations software. The study proposes a complete methodology for building the model and examples of simulations of one-, two- and three-dimensional problems, as well as examples of simulation of macro problems in the presence of external thermal and electrical devices, such as heatsink and electrical load. [ABSTRACT FROM AUTHOR]