14 results on '"Zhang Zhengxuan"'
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2. A comprehensive evaluation of radiation hardening by applying negative body bias and back-gate bias in 130 nm PDSOI technology
3. The analysis of the anomalous hot-carrier effect in partially depleted SOI pMOSFETs fabricated on modified wafer
4. Radiation induced transconductance overshoot in the 130 nm partially-depleted SOI MOSFETs
5. Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs
6. Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130 nm partially depleted SOI CMOS technology
7. Hardening silicon-on-insulator nMOSFETs by multiple-step Si+ implantation
8. Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs
9. Hardening silicon-on-insulator nMOSFETs by multiple-step Si + implantation
10. Total ionizing dose effect in 0.2μm PDSOI NMOSFETs with shallow trench isolation
11. Bias dependence of TID radiation responses of 0.13μm partially depleted SOI NMOSFETs
12. Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology
13. Total ionizing dose effects in elementary devices for 180-nm flash technologies
14. Comparison of TID response in core, input/output and high voltage transistors for flash memory
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