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Abstract: The impact of device width on the variability of radiation-induced leakage currents in 90nm and 65nm CMOS technologies is investigated. The off-state leakage current variability increases with decreasing channel width for both technologies, and with increasing total ionizing dose for three different process variants from the 90nm technology. More variability is observed for narrow width devices compared to wider devices before and after irradiation. Device-to-device variability is compared for two technologies (65 and 90nm) and three process variants (low, standard, and high threshold voltage). These results illustrate the importance of process-induced variability on the radiation response of MOS devices and integrated circuits. [Copyright &y& Elsevier]

Abstract: The magnitude of the low-frequency 1/f noise in GaN/AlGaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions varies in response to hot-electron stress. Density-functional-theory (DFT) calculations show that the Ga vacancies that are responsible for the positive shift in pinch-off voltage due to electrical stress in Ga-rich and N-rich devices do not contribute significantly to the observed changes in 1/f noise with electrical stress. The N anti-sites that cause negative shifts in pinch-off voltage in ammonia-rich devices can cause an increase in the noise magnitude after stress. DFT calculations also show that singly hydrogenated and dehydrogenated Ga–N divacancies also can contribute to the noise before and after stress, respectively. A decrease in noise magnitude is also observed in some devices after stress. [Copyright &y& Elsevier]