1. The growth of semi-insulating gallium arsenide by the LEC process
- Author
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N. Visentin, J.P. Duchemin, B. Lent, and M. Bonnet
- Subjects
Alternative methods ,chemistry.chemical_compound ,Materials science ,chemistry ,Metallurgy ,General Engineering ,chemistry.chemical_element ,Partial pressure ,Gallium ,Semi insulating ,Arsenic ,Gallium arsenide - Abstract
A research and development programme has been launched at the Laboratoire Central de Recherche, to optimise the growth parameters for the production of high quality semi-insulating bulk gallium arsenide by the Liquid Encapsulation Czochralski (LEC) technique. Mono-crystals up to 3″ diameter, weighing up to 2.5 kg, have been grown and assessed for a range of crystal-growth parameters. A method of minimising the concentration of gallium inclusions within the bulk material is described. Finally, we discuss an alternative method of minimising arsenic loss, namely growth under a partial pressure of arsenic, and present preliminary thoughts on the concept of a ‘hot wall’ puller.
- Published
- 1982
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