1. Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal–insulator–semiconductor high-electron -mobility transistors.
- Author
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Jiang, Guangyuan, Cui, Peng, Zhang, Guangyuan, Zeng, Yuping, Yang, Guang, Fu, Chen, Lin, Zhaojun, Wang, Mingyan, and Zhou, Heng
- Subjects
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DIELECTRIC polarization , *METAL oxide semiconductor field-effect transistors , *MODULATION-doped field-effect transistors , *METAL insulator semiconductors , *GALLIUM nitride , *TWO-dimensional electron gas , *ZIRCONIUM oxide - Abstract
An InAlN/GaN MIS-HEMT with ZrO 2 gate dielectric layer and a Schottky-gate InAlN/GaN HEMT were fabricated. Subsequently, the influence of ZrO 2 gate dielectric layer on polarization Coulomb field (PCF) scattering in InAlN/GaN MIS-HEMT was studied. Compared with InAlN/GaN HEMT, the ZrO 2 gate dielectric layer in InAlN/GaN MIS-HEMT results in fewer additional polarization charge and higher two-dimensional electron gas density at the same gate-source voltage (V GS) conditions. Also, we established that both of these factors weaken PCF scattering intensity. However, the InAlN/GaN MIS-HEMT has a larger gate swing. Therefore, there is a smaller V GS was applied during regular operation of device. When the V GS is small, PCF scattering is the strongest scattering and play non-negligible impact in the size of total electron mobility. This study provides a new theoretical foundation for further enhancing the performance of InAlN/GaN MIS-HEMTs. • The influence of the ZrO 2 gate dielectric layer on PCF scattering in InAlN/GaN MIS-HEMTs was determined. • The ZrO 2 layer leads to fewer Δ ρ G and higher n 2 D E G at the same gate bias conditions, both of these factors weaken PCF scattering intensity. • When the gate bias is small, PCF scattering plays a dominant role in the magnitude of the total electron mobility. • The results of this study have providing a new theoretical basis for further enhancing performance of InAlN/GaN MIS-HEMTs. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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