1. Reliability of III–V devices – The defects that cause the trouble
- Author
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Pantelides, Sokrates T., Puzyrev, Yevgeniy, Shen, Xiao, Roy, Tania, DasGupta, Sandeepan, Tuttle, Blair R., Fleetwood, Daniel M., and Schrimpf, Ronald D.
- Subjects
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RELIABILITY in engineering , *POINT defects , *ELECTRONIC equipment , *HOT carriers , *MODULATION-doped field-effect transistors , *DENSITY functionals , *PHASE transitions , *CHEMICAL decomposition - Abstract
Abstract: Degradation of electronic devices by hot electrons is universally attributed to the generation of defects, but the mechanisms for defect generation and the specific nature of the pertinent defects are not known for most systems. Here we describe three recent case studies in III–V high-electron-mobility transistors that illustrate the power of combining density functional calculations and experimental data to identify the pertinent defects and associated degradation mechanisms. In all cases, benign pre-existing defects are either depassivated (irreversible degradation) or transformed to a metastable state (reversible degradation). [Copyright &y& Elsevier]
- Published
- 2012
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