1. Deep reactive ion etching of sub-micrometer trenches with ultra high aspect ratio
- Author
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Frederic Marty, Anand Summanwar, Jayalakshmi Parasuraman, Dan E. Angelescu, Philippe Basset, Tarik Bourouina, Electronique, Systèmes de communication et Microsystèmes (ESYCOM), Conservatoire National des Arts et Métiers [CNAM] (CNAM), HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-Université Paris-Est Marne-la-Vallée (UPEM)-ESIEE Paris, ESIEE Paris, and Université Paris-Est (UPE)
- Subjects
Microelectromechanical systems ,Materials science ,business.industry ,Nanotechnology ,Condensed Matter Physics ,Aspect ratio (image) ,Atomic and Molecular Physics, and Optics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Micrometre ,Etching (microfabrication) ,Trench ,Deep reactive-ion etching ,Optoelectronics ,Figure of merit ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Electrical and Electronic Engineering ,business ,Cryogenic processor ,ComputingMilieux_MISCELLANEOUS - Abstract
This paper focuses on deep reactive ion etching (DRIE) of sub-micrometer features. Very high aspect ratios up to 160:1 on trenches of 250nm have been achieved using the Bosch process and up to 120:1 on trenches of 35nm using a cryogenic process. The proposed etch recipes are specifically optimized for sub-micrometer features, and are not compatible with feature sizes in the tens of micrometer range. Based on analyzing data from our experiments and from literature, we show that a previously reported two-parameter empirical logarithmic law accurately describes the dependency of aspect ratio on trench width over a wide range of widths and etch parameters, including the sub-micrometer regime. We also propose a new figure of merit (FOM) that describes the ultimate aspect ratio achievable for any given etching process. This FOM also allows comparison of different aspect ratio performances, while taking into account in the same time, the dimension of the trench for which this performance is attained.
- Published
- 2014
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