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AIN is used as a template layer for deep UV (DUV) emitter and detector applications, because of its wide bandgap and high thermal conductivity. In this study, trimethylgallium (TMGa) source is used as surfactant to improve crystal quality and decrease dislocation density (DD) of AlN layers grown on sapphire (Al2O3) substrate surfaces by Metal Organic Vapor Phase Epitaxy (MOVPE) system. TMGa pre-flow time and pre-flow amount that TMGa pre-flow to the nucleation stage are the subjects of two distinct optimization studies. The structural and optical properties of grown AIN are examined by a high resolution X-ray diffractometer (HR-XRD), Raman spectroscopy, and UV–Vis–NIR spectrophotometer, respectively. TMGa pre-flow time and TMGa pre-flow amount determined to obtain high crystal quality AlN epilayers are 2 s and 0.446 × 10����� 5 mol/min, respectively. HR-XRD investigation of these growths yields FWHM values of 159/2718 arcsec and 201/1550 arcsec for the ω (002) and ω (102) scans, respectively.