Y. C. Ku, Takuya Mori, Chris de Ruiter, Greet Storms, Guo-Tsai Huang, Jon Wu, Christophe Fouquet, Kelvin Pao, Charlie Chen, Tatung Chow, C. W. Hsieh, Jacky Huang, KS Chen, T. S. Gau, Martijn van Veen, Martijn Maassen, Reinder Teun Plug, Pu Li, Chih-Ming Ke, Arie Jeffrey Den Boef, Paul Christiaan Hinnen, Hua Xu, Maurits van de Schaar, Kai-Hsiung Chen, Youping Zhang, Kaustuve Bhattacharyya, Yi-Yin Chen, Gary Zhang, Eric Verhoeven, and Steffen Meyer
In order to meet current and future node overlay, CD and focus requirements, metrology and process control performance need to be continuously improved. In addition, more complex lithography techniques, such as double patterning, advanced device designs, such as FinFET, as well as advanced materials like hardmasks, pose new challenges for metrology and process control. In this publication several systematic steps are taken to face these challenges.