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The corrosion behavior of sputter-deposited Al, Al-Cu, and Al-Si alloy thin films in dilute hydrofluoric (HF) acid solution was investigated. These materials maintain a thin aluminum oxide film in dilute HF solutions and, consequently, are susceptible to localized corrosion. Pit densities increase for the alloys with Cu and, to a lesser extent, Si additions. Open circuit potentials (OCP) are more positive for such alloys relative to the OCP of pure Al. Metastable pits in Al-Cu alloys are formed in Cu-depleted zones at grain boundaries which are galvanically coupled to adjacent θ-Al2Cu precipitates. Metastable pits in Al-Si alloys are formed in the Al matrix which is galvanically coupled to adjacent elemental Si nodules. θ-Al2Cu has different electrochemical characteristics than Al, even though both maintain a thin Al oxide in dilute HF solutions. θ-Al2Cu has a more positive OCP than pure Al and facilitates cathodic reactions at enhanced rates relative to pure Al. Hence, its presence raises the potential of the adjacent pure Al grain boundary to potentials which increase the probability of metastable pitting. Evidence is also presented which suggests that metastable pit growth may be cathode limited. A new hypothesis describing one mechanism by which θ-Al2Cu supports cathodic electron transfer re-actions is discussed.

The precipitation, dissolution, and reprecipitation processes of Al2Cu (θ phase) in Al-2 wt pct Cu thin films were studied. The films were characterized in the as-deposited condition, after annealing at 425 °C for 35 minutes, and after rapid thermal annealing (RTA) at 345 °C, 405 °C, and 472 °C. In the as-deposited samples, the precipitates had a fine even distribution throughout the thin film both at aluminum grain boundaries and within the aluminum grains. Annealing below the solvus temperature caused the grain boundary precipitates to grow and precipitates within the center of aluminum grains to diminish. Annealing above 425 °C caused the θ-phase precipitates to dissolve. Upon cooldown, the θ phase nucleated at aluminum grain boundaries and triple points in the form of plates.In situ heating and cooling experiments documented this process in real time. Analytical microscopy revealed that there is a depletion of copper at the aluminum grain boundaries in regions free of precipitates. The θ-phase precipitates nucleated and grew at the grain boundariesvia a collector plate mechanism and drew copper from the areas adjacent to the aluminum grain boundaries.

Solders of Pb-rich compositions, such as 5Sn-95Pb, are commonly used in electronic packaging applications, and this demanding use necessitates that the microstructure-property-processing relationships of the solder be understood fully. In this study, the microstructure of 5Sn-95Pb solder was characterized using a variety of metallographic techniques. The effect of cooling rate on the precipitation of β-Sn from supersaturated α-Pb was determined. On slow cooling, β-Sn precipitates discontinuously with resultant β-Sn lamella alternating with the α-Pb. Upon rapid cooling, the β-Sn precipitates with a nominally homogeneous distribution. These discrete precipitates were found to have a platelike shape with a (111)Pb habit plane and an orientation relationship of (111)Pb‖(010)Sn and [011]Pb‖ [001]Sn. Regions of the β-Sn precipitates that curved away from this habit plane formed ledges. Upon heating, the precipitates were found to dissolvevia a ledge mechanism. Prolonged aging of both the fast and slow cooled 5Sn-95Pb resulted in a coarsening of the β-Sn precipitates with a resultant decrease in strength. Furthermore, the strength of the aged alloy was observed to be independent of cooling rate.