Search

A new method of processing the experimental current-voltage characteristics of photodiodes using reference points is proposed. By comparing a trap detector, developed at the All-Russia Research Institute of Optophysical Measurements based on Hamamatsu S6337 photodiodes with an HH-03-1337 trap detector, certified using a cryogenic radiometer at the PTB, an experimental value of the internal quantum efficiency of the Hamamatsu S6337 photodiode is obtained. [ABSTRACT FROM AUTHOR]

The results of high-precision measurements of the current-voltage characteristics of a number of silicon photodiodes are presented. It is established experimentally that random fluctuations of the photodiode temperature have the greatest effect on the measurement accuracy. A temperature stabilization method is proposed, based on the use of the photodiode itself as a temperature sensor and which enables the error in measuring the voltage and current in the photodiode to be reduced by a factor of 103. The results obtained are compared with known theoretical models. It is shown that the one-dimensional model of the photodiode (PC1D) is much more accurate than the Schottky equation. [ABSTRACT FROM AUTHOR]

The effect of measurement errors in the current-voltage characteristics on the accuracy with which the radiation power q absorbed by the photodiode is determined is investigated theoretically. A procedure for measuring the current-voltage characteristic using exponential averaging is proposed, which enables experimental curves to be obtained that are uniform with respect to the measurement of the noise. Statistical distributions of the quantity q are presented from which the systematic and random errors due to the measurement noise are determined. [ABSTRACT FROM AUTHOR]

It is proposed for the first time that a number of basic characteristics of an optically thick photoelectric diode may be determined from its current-voltage characteristic. It is shown that it is theoretically possible to determine the internal quantum efficiency of a photodiode by means of model calculations. The solution of the inverse problem is based on a comparison of theoretical dependences obtained with the use of the PC1D program with 'experimental' current-voltage characteristics. [ABSTRACT FROM AUTHOR]