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2. Influence of Bi on dielectric properties of GaAs1−xBix alloys.

Author

Ulutas, K., Yakut, S., Bozoglu, D., Deger, D., Arslan, M., and Erol, A.

Subjects
*DIELECTRIC properties, *DIELECTRIC devices, *ALLOYS, *OPTICAL properties, *AUDITING standards, *SILVER alloys
Abstract

Pure GaAs and GaAs1−xBix alloys with different Bi ratios (1 %, 2.5 %, 3.5 %) fitted with silver contacts were measured with a dielectric spectroscopy device. Dielectric characterization was performed at room temperature in the frequency range of 0.1 Hz to 1 MHz. GaAs exhibits three relaxation regions corresponding to space-charge, dipolar and ionic polarizations in sequence with increasing frequency while GaAs1−xBix samples show only a broad dipolar polarization in the same frequency range. This result proves the filling of the lattice with Bi through making a new bonding reducing the influence of ionic polarization. This finding supports the previous results concerning optical properties of GaAs1−xBix, presented in the literature. [ABSTRACT FROM AUTHOR]

Published
2019
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3. Influence of Bi on dielectric properties of GaAs1−xBix alloys

Author

Ayse Erol, D. Deger, Sahin Yakut, Kemal Turker Ulutas, Deniz Bozoglu, M. Arslan, Ulutas, K, Yakut, S, Bozoglu, D, Deger, D, Arslan, M, Erol, A, Sakarya Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Bölümü, Arslan, Mustafa, and Erol, Atila

Subjects
010302 applied physics, Materials science, Mechanical Engineering, Materials Science, gaas1−xbix, 02 engineering and technology, Dielectric, dielectric modulus, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Nanomaterials, Condensed Matter::Materials Science, alloys, Mechanics of Materials, dielectric properties, 0103 physical sciences, TA401-492, General Materials Science, Composite material, 0210 nano-technology, Materials of engineering and construction. Mechanics of materials
Abstract

Pure GaAs and GaAs1−xBix alloys with different Bi ratios (1 %, 2.5 %, 3.5 %) fitted with silver contacts were measured with a dielectric spectroscopy device. Dielectric characterization was performed at room temperature in the frequency range of 0.1 Hz to 1 MHz. GaAs exhibits three relaxation regions corresponding to space-charge, dipolar and ionic polarizations in sequence with increasing frequency while GaAs1−xBix samples show only a broad dipolar polarization in the same frequency range. This result proves the filling of the lattice with Bi through making a new bonding reducing the influence of ionic polarization. This finding supports the previous results concerning optical properties of GaAs1−xBix, presented in the literature.

Published
2019

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