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[1] R.N. Hall, J.H. Racette, J. Appl. Phys. 35 (1964) 379. [2] F.C. Frank, D. Turnbull, Phys. Rev. 104 (1956) 617. [3] R. Leon, P. Werner, K.M. Yu, M. Kaminska, E.R. Weber, Appl. Phys. A 61 (1995) 7. [4] H. S. Leipner, R. F. Scholz, F. Syrowatka, J. Schreiber, P. Werner, Phil. Mag. A (1999) . after Cu-indiffusion and quenching no vacancy-type defects are registered shallow traps are found which are directly related to Cu during annealing vacancy clusters grow and dissolve above 850 K vacancies and clusters are decorated with Cu Distance between possible annihilation centres seen in TEM is much longer than mean positron diffusion length so they have no influence on positron trapping This work: understanding diffusion process and related defects (vacancies) in more detail