1. Crystallographic and electro-optic analysis of pure and Cu/Mn-doped Cd0.6Zn0.4O ternary alloy: Role of the defect states and imperfection density.
- Author
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Bhukkal, Chitra, Vats, Rajni, Goswami, Bindiya, Rani, Neelam, and Ahlawat, Rachna
- Subjects
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MATERIALS science , *DENSITY of states , *CARRIER density , *TRACE elements , *ULTRAVIOLET-visible spectroscopy , *ZINC oxide - Abstract
• The variation of dopants (Cu/Mn) has been studied on Cd 0.4 Zn 0.6 O (0 ≤ x ≤ 1) prepared by chemical rout. • Mechanism of structural defects, faults, strain, dislocations are elaborated in-depth. • A redshift has been pronounced in doped samples owing to bandgap shrinkage. • Band-edge emission is found at 382, 417 nm, and Cu/Mn emission at 520/580 nm. • Resistivity, mobility, and carriers are altered due to change in ideal stoichiometry. Pure and Cu/Mn-doped Cd 0.4 Zn 0.6 O (0 ≤ x ≤ 1) ternary alloy is prepared by co-precipitation and further the variation of dopant concentration has been studied. The diffractogram of the undoped sample has peaks of both rocksalt (RS) CdO and wurtzite (WZ) ZnO phase. The individual and simultaneous doping of Cu and Mn elements has significantly altered the intensity, FWHM, and developments of defect states in Cd 0.4 Zn 0.6 O alloy. TEM microscope has investigated the crystalline size and interplanar spacing that is slightly decreased with dopant concentration which lies within the range ~ 38–30 nm. UV–Vis spectroscopy analyzed a decreasing trend in bandgap energy with dopant concentration. IN PL, the near band edge and deep trap state emission is observed at 382, 417, 448, 520 and 580 nm wavelengths. The resistivity, carrier concentration, and mobility are also computed which proposed that Cu/Mn-doped Cd 0.4 Zn 0.6 O alloy could be the better TCO with new opportunities for material science researchers. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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