1. Performance improvement of 650nm band AlGaInP laser diodes with optimal diffusion barriers
- Author
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Shin, Young Chul, Kim, Bum Jun, Kang, Dong Hoon, Kim, Young Min, and Kim, Tae Geun
- Subjects
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PROPERTIES of matter , *CHEMICAL vapor deposition , *MASS spectrometry , *SPECTRUM analysis - Abstract
Abstract: GaInP/AlGaInP multiple quantum-well (MQW) laser diodes with diffusion barriers for Zn, grown by metal organic chemical vapor deposition (MOCVD), were fabricated and characterized. To determine the optimal conditions for the diffusion barriers, we investigated Zn diffusion in the GaInP/(Al0.5Ga0.5)0.5In0.5P MQW layers against three undoped (Al0.7Ga0.3)0.5In0.5P diffusion barriers with thicknesses of 0, 90, and 130nm, respectively, by secondary ion mass spectroscopy (SIMS). Compared to the reference AlGaInP laser diode without a diffusion barrier, the AlGaInP ridge laser with a 130nm thick diffusion barrier on the top of the MQW layer had a threshold current that was greatly reduced from 110 to 75mA and the characteristic temperature T o that was increased from 113 to 144K in the temperature range from 25 to 50°C. This report presents quantitative information on the effect of Zn diffusion on laser performance. [Copyright &y& Elsevier]
- Published
- 2006
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