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[Display omitted] • M type hexaferrites with composition Pb 1-x Cr x Fe 12 O 19 x = (0.0,0.1,0.2,0.3,0.4,0.5) were synthesized by the sol-gel auto combustion technique. • Peaks of the XRD pattern match well with the standard pattern of P63/mmc group with JCPDS card No (43-0002). • Crystallite size lies in the range of 63–53 nm. Lattice parameters, crystallite size and cell volume was found to decrease with the substitution of Cr3+ content. • Dielectric constant and ac conductivity (σ ac) increases gradually with the increase in Chromium doping. Mofreover, Pb 1-x Cr x Fe 12 O 19 with x = 0.2 have exceptional dielectric properties with significant Q-value (4900). • These samples may suitable for high frequency applications such as phase shifter, modulators and also in longitudinal recording media. Chromium substituted M-type hexagonal ferrites with nominal composition Pb 1-x Cr x Fe 12 O 19 where x= (0.0, 0.1, 0.2, 0.3, 0.4, 0.5) were prepared via sol gel route. Structure of the single phase lead hexaferrite was estimated from X-ray diffraction (XRD) analysis. Scanning electron microscopy (SEM) confirmed the formation of hexagonal platelets with an average grain size in the range of 53–63 nm. Crystallite size, lattice parameters and cell volume was found to decrease with the increase of Chromium concentration. Magneto crystalline anisotropy and saturation magnetization has been explored through the law of approach to the saturation magnetization. Saturation magnetization first increased and then found to be maximum (64 emu/g) at 30% of Cr3+ doped lead hexaferrite and minimum coercivity (6.54 KOe) was perceived for this composition. Dielectric constant, dielectric loss, tangent loss, real and imaginary part of electric modulus, ac conductivity and Q-values of the prepared samples were also explained. With the increase of dopant (Cr3+) concentration, dielectric constant was increased gradually. These characteristics are suitable for various applications such as phase shifter, modulators, stealth technologies and also in Multilayer chip inductor. [ABSTRACT FROM AUTHOR]