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Zinc oxide (ZnO) is a key material in the field of transparent large-area electronics. Some of the ZnO applications in large-area electronics include sensors, transistors and solar cells. In this work, ZnO films doped with aluminium (Al), gallium (Ga) and titanium (Ti) with different doping concentrations were deposited on glass substrates via the radio frequency (R.F.) plasma magnetron sputtering technique. The correlations of different doping concentration with the structural, optical and electrical properties were investigated by Atomic Force Microscopy, Ultraviolet-Visible Spectrometer and Hall Electronic Transport Measurement System, respectively. [ABSTRACT FROM AUTHOR]

In this work, the influences of catalyst materials of counter electrodes – carbon (C) and platinum (Pt) electrodes, transparent conducting oxide (TCO) substrates – fluorine-doped tin oxide (FTO) and indium-doped tin oxide (ITO) glasses and dyes (N3 and N719 dyes) on the photovoltaic performance of dye-sensitised solar cells (DSCCs) were investigated. DSSC was fabricated with standard configuration: a mesoporous TiO2layer (15–20 nm particle size, anatase phase) deposited on ITO/FTO glass as photoanode, N3/N719 (Solaronix) as dyes, chenodeoxycholic acid as co-adsorbent in dye solution, Pt-coated/C-coated glass as counter electrode and Iodolyte AN-50 (Solaronix) as electrolyte. The optimised DSSC demonstrated photovoltaic performance of short-circuit photocurrent density (Jsc) of 8.36 mA/cm2, open-circuit photovoltage (Voc) of 0.69 V and a fill factor (FF) of 0.70, corresponding to power conversion efficiency (PCE) of 4.05% under simulated air mass 1.5 solar light condition. [ABSTRACT FROM PUBLISHER]