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Pure Li4SiO4 ceramic material is obtained using citrate sol-gel method followed by sintering at 750°C. The crystallographic phase of the material is investigated by X-ray diffraction. The conductivity of the ceramic material is determined at different temperatures. Meanwhile, the dielectric properties are observed in order to obtain further information on ion dynamics in the material. The X-ray diffraction result shows the formation of a pure monoclinic Li4SiO4 crystal structure with lattice parameters a = 5·140 Å, b = 6·094 Å, c = 5·293 Å and β = 90°. The conductivity of the material increases linearly with the increase in temperature. The conductivity of the sample is 1·16×10-4 S cm-1 at 100°C. The frequency dependence of conductivity follows the universal power law variation σac (ω) = σo+Aωs. The plot of pre-exponent s versus temperature suggests that the conduction mechanism in the system can be described using correlated barrier hopping model. The increase in dielectric constant and dielectric loss and the peak shift of tan δ to higher frequencies with temperature indicate that the increase in conductivity with temperature is due to the increase in number and hopping rate of charge carriers with temperature. [ABSTRACT FROM AUTHOR]