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Abstract: To find a solution to the problem that antiferroelectric materials could not be used in thick-film based uncooled infrared detectors because of their high sintering temperature, Pb0.87Ba0.1La0.02(Zr0.7Sn0.24Ti0.06)O3 +6wt%PbO antiferroelectric ceramics were first prepared at 1000°C by using 0.8PbO–0.2B2O3 glass as a sintering aid. The results showed that the addition of 0.8PbO–0.2B2O3 sintering aids was beneficial for reducing the sintering temperature without deteriorating the electric properties when the content of glass was practical. The ceramics containing 1wt% 0.8PbO–0.2B2O3 sintering aids demonstrated optimal electrical field induced pyroelectric properties. The largest pyroelectric coefficient of 6100μC/m2K and figure of merit of 17×10−5 Pa−0.5 were obtained in Pb0.87Ba0.1La0.02(Zr0.7Sn0.24Ti0.06)O3 +6wt%PbO antiferroelectric ceramics with 1wt% glass doping, which can be comparable to that of conventional phase transition materials at a high temperature sintering. The large pyroelectric coefficient and figure of merit of low temperature sintered antiferroelectric ceramics provide a basis for antiferroelectric materials used in thick-film based infrared detectors. [Copyright &y& Elsevier]

Abstract: In this paper, we reported the successful preparation of fluorine-doped tin oxide (FTO) thin films on large-area glass substrates (1245mm×635mm×3mm) by self-designed offline atmospheric pressure chemical vapor deposition (APCVD) process. The FTO thin films were achieved through a combinatorial chemistry approach using tin tetrachloride, water and oxygen as precursors and Freon (F-152, C2H4F2) as dopant. The deposited films were characterized for crystallinity, morphology (roughness) and sheet resistance to aid optimization of materials suitable for solar cells. We got the FTO thin films with sheet resistance 8–11Ω/□ and direct transmittance more than 83%. X-ray diffraction (XRD) characterization suggested that the as-prepared FTO films were composed of multicrystal, with the average crystal size 200–300nm and good crystallinity. Further more, the field emission scanning electron microscope (FESEM) images showed that the films were produced with good surface morphology (haze). Selected samples were used for manufacturing tandem amorphous silicon (a-Si:H) thin film solar cells and modules by plasma enhanced chemical vapor deposition (PECVD). Compared with commercially available FTO thin films coated by online chemical vapor deposition, our FTO coatings show excellent performance resulting in a high quantum efficiency yield for a-Si:H solar cells and ideal open voltage and short circuit current for a-Si:H solar modules. [Copyright &y& Elsevier]