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Start Over Author "Zheng, Y.D." Journal materials letters
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7. The LiNbO 3 thin films deposited on the Al 0.28 Ga 0.72 N/GaN substrate

Author

Yan, W.S., Zhang, R., Xie, Z.L., Xiu, X.Q., Zheng, Y.D., and Liu, Z.G.

Subjects
*LITHIUM niobate, *PULSED laser deposition, *ALUMINUM compounds, *GALLIUM nitride, *CRYSTAL growth, *X-ray diffraction, *MICROFABRICATION, *INTERFACES (Physical sciences)
Abstract

Abstract: The LiNbO 3 thin films are successfully grown by pulsed-laser deposition on theAl 0.28 Ga 0.72 N/GaN substrate. The films are characterized by the X-ray diffraction and the X-ray photoelectron spectroscopy. The ferroelectric properties are measured by the piezoresponse force microscopy. An Al/SiO 2 /LiNbO 3 /Al 0.28 Ga 0.72 N/GaN structure is then fabricated and measured by high frequency capacitance–voltage at 1MHz. The mechanism of interaction between interfaces is revealed. [Copyright &y& Elsevier]

Published
2010
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