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Abstract: Cu2ZnSnS4 (CZTS) films were successfully prepared using a co-electrodeposition-annealing route, in which metal precursor layers were deposited by a co-electrodeposition in aqueous ionic solution, followed by the sulfurization in elemental sulfur vapor ambient at 400°C for 30min using nitrogen as the protective gas. The dependence of the structural and optical properties on composition in aqueous solution is investigated. It is shown that CZTS film synthesized at Cu/(Zn+Sn)=0.71 and Zn/Sn=1 has a kesterite structure with an absorption coefficient in the order of 104 cm−1, and the band-gap can be feasible modified by changing the element ratios in solution. This indicates that co-electrodeposition-annealing method is a viable process for the growth of CZTS films for the application in photovoltaic device. [Copyright &y& Elsevier]

Abstract: In this article, we present the first report about preparing Si-incorporated TiO2 film on pure titanium implant by micro-arc oxidation (MAO) in the simple electrolyte only containing silicon salt (NaOH and Na2SiO3 with different concentrations). We show that the MAO film could be formed in this electrolyte and Si-incorporation could modulate the morphology as well as the pore size of the film. Compared to pure titanium and MAO film without Si-incorporation, the resultant Si-incorporated MAO films have better biocompatibility for the adhesion and proliferation of rat bone mesenchymal stem cells (rBMSCs) on them. This Si-incorporated MAO film should be a potential method to modify the orthopedic implants. [Copyright &y& Elsevier]