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The intrinsic and co-doped nano TiO2 particles were synthesized by sol-gel method. The crystal structure was characterized by X-ray diffraction and high-resolution electron microscopy. An obviously shift toward longer wavelengths direction can be observed in the UV-visible absorption spectra, and the band gap can be estimated to be 2.4 eV. The response range of the TiO2 photocatalyst can be widened from UV to visible light. The results of photocatalysis study show that co-doped nano TiO2 shows good photocatalytic performance. The transition metal and rare earth element co-doped TiO2 nano particles will be a very attractive candidate for the wastewater degradation and environmental protection.

High-quality phosphorus (P) doped ZnSe nanowires (NWs) were synthesized through a chemical vapor deposition (CVD) method. The p-type conductivity of P-doped ZnSe NWs was confirmed by field-effect transistors (FETs), which show the hole mobility (μh) of 0.173 cm2V−1s−1 and carrier concentration (nh) of 5.5×1019 cm−3, representing the highest value achieved for p-type ZnSe nanostructures thus far. High-performance photodetectors (PDs) were fabricated by construction of ZnSe/Si p-n heterojunction diodes, which show high responsivity (R) of 1.1×105 A/W and photoconductivity gain (G) of 2.9×105 at forward bias and fast response speed of 74/153 μs at reverse bias to the incident light. These results reveal that such P-doped ZnSe NWs are excellent candidates for optoelectronic applications.

Single-crystal nitrogen (N) doped p -type ZnSe nanobelts (NBs) with zinc blende structure were synthesized in ammonia atmosphere via a thermal evaporation method. The p -type conductivity of ZnSe:N NBs was confirmed by field-effect transistors (FETs) based on individual NBs. High-performance photodetectors were constructed based on ZnSe:N NBs, which show high sensitivity and relatively fast response speed to the incident light with a sharp cut-off at 460 nm, corresponding to the band-gap of ZnSe. The high photosensitivity and relatively fast response speed are attributable to the high crystal quality of the ZnTe nanowires. These results reveal that such single-crystalline ZnSe NBs are excellent candidates for optoelectronic applications.