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We present the growth of InSb nanowires (NWs) by using metal-organic chemical vapor deposition (MOCVD). During the process, an indium rich layer was created by introducing TMIn source before initializing the InSb NW growth. The effects of growth parameters such as temperature and V/III ratio on the product have been well studied. The growth of InSb NWs occurs within a small temperature range. This study also indicated that the nanowire quality was also affected at very high or very low input V/III ratio. A self-nucleation growth based on indium droplets was proposed to be the growth mechanism of the InSb NWs obtained here, which is unlike the conventional tip-led VLS or VSS growth in the catalyst-assisted processes.

Morphological and optical properties of as-grown copper tin sulfide layered materials have been investigated using an original analytical protocol. Conjoint Band gap–Roughness optimality has been obtained for the particular value of the copper-to-tin ratio χopt = [Cu2+] / [Sn2+] = 3.27 approximately. Regarding the optical, thermal and mechanical constraints of the use of similar materials, precursor mixture parameters have to be chosen before optimal performances are reached. In this context, the obtained value of the optimal copper-to-tin ratio in the precursor solution is proposed. This value could be an efficient guide to understanding these materials’ epitaxial growth–deposition kinetics and optimizing mechanical resistance to damage and fatigue.

This letter presents brief answers to the comments and critics emitted on the ternary materials optimization protocol which was published in Materials Letters (No 64–2009–pp. 778–780). The main critics were based on a presumed and claimed uniqueness of the proposed solution. These critics are addressed here on the bases of the notion of variables normalization.