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1. Metal-organic molecular beam epitaxy (MOMBE) and laser-modified MOMBE of III-V semiconductors

Author

Charles W. Tu, H.K. Dong, and N. Y. Li

Subjects
Photoluminescence, Condensed Matter::Other, business.industry, Inorganic chemistry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter Physics, Laser, Epitaxy, law.invention, Condensed Matter::Materials Science, chemistry.chemical_compound, Arsine, Semiconductor, chemistry, law, Optoelectronics, General Materials Science, Thin film, business, Quantum well, Molecular beam epitaxy
Abstract

We shall first describe some unique features of metal-organic molecular beam epitaxy (MOMBE), then focus on the use of safer alternative precursors to arsine, and finally report on the effect of argon ion laser irradiation on the MOMBE of GaAs and GaAs InGaAs quantum well structures.

Published
1995
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