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This study presents theoretical and experimental investigations into the electron and hole color centers in BaFBr crystals, characterizing their electronic and optical properties. Stoichiometric BaFBr crystals grown by the Steber method were used in the experiments. Radiation defects in BaFBr crystals were created by irradiation with 147 MeV 84 Kr ions with up to fluences of 10 10 -10 14 ions/cm 2 . The formation of electron color centers (F(F - ), F 2 (F - ), F 2 (Br - )) and hole aggregates was experimentally established by optical absorption spectroscopy. Performed measurements are compared with theoretical calculations. It allows us to determine the electron transition mechanisms and investigate the processes involved in photoluminescence emission in Eu-doped BaFBr materials to enhance the understanding of the fundamental electronic structure and properties of electron and hole color centers formed in BaFBr crystals.

We investigated the electronic structure of Mg-, Si-, and Zn-doped four-faceted [001]- and [110]-oriented SnO 2 nanowires using first-principles calculations based on the linear combination of atomic orbitals (LCAO) method. This approach, employing atomic-centered Gaussian-type functions as a basis set, was combined with hybrid density functional theory (DFT). Our results show qualitative agreement in predicting the formation of stable point defects due to atom substitutions on the surface of the SnO 2 nanowire. Doping induces substantial atomic relaxation in the nanowires, changes in the covalency of the dopant-oxygen bond, and additional charge redistribution between the dopant and nanowire. Furthermore, our calculations reveal a narrowing of the band gap resulting from the emergence of midgap states induced by the incorporated defects. This study provides insights into the altered electronic properties caused by Mg, Si, and Zn doping, contributing to the further design of SnO 2 nanowires for advanced electronic, optoelectronic, photovoltaic, and photocatalytic applications.

The aim of this study is to comprehensively examine the structural composition and properties of the AgAlS 2 crystal during its high-pressure phase. This analysis delves into the second coordination environment of the crystal structure and elucidates the distinct transformations it undergoes during the phase transition. The band energy structure was calculated, and the origin of electronic levels was clarified. It is shown that the crystal becomes non-stratified during the phase transition. This study also determined the values of the crystal's carrier effective masses, underscoring its spatial anisotropy. It was found that the calculated optical functions are similar to the crystal in the chalcopyrite structure, and their differences are shown. Further, this study involved the calculation of the crystal's phonon spectrum, revealing the spectrum's transformation during the phase transition. The vibrational frequencies were also obtained, with a symmetrical classification of vibrational modes. Finally, this study derived the infrared and Raman spectra of the AgAlS 2 crystal, thereby providing a comprehensive picture of the crystal during its high-pressure phase.

In this work, we present the results of the structure and luminescence properties of YAG:Ce (Y 3 Al 5 O 12 doped with Ce 3+ ions) ceramic samples. Their synthesis was carried out by sintering samples from the initial oxide powders under the powerful action of a high-energy electron beam with an energy of 1.4 MeV and a power density of 22-25 kW/cm 2 . The measured diffraction patterns of the synthesized ceramics are in good agreement with the standard for YAG. Luminescence characteristics at stationary/time-resolved regimes were studied. It is shown that under the influence of a high-power electron beam on a mixture of powders, it is possible to synthesize YAG:Ce luminescent ceramics with characteristics close to the well-known YAG:Ce phosphor ceramics obtained by traditional methods of solid-state synthesis. Thus, it has been demonstrated that the technology of radiation synthesis of luminescent ceramics is very promising.

The structural, electronic and optical properties of rocksalt Mg1-xZnxO and wurtzite Zn1-xMgxO with the concentration of Zn and Mg varying from 0.125 to 0.875 were investigated using density functional theory (DFT), DFT+U, linear response theory and the Bethe-Salpeter equation. According to the experimental band gap for varied concentrations of magnesium and zinc, modeling the supercell was utilized for the varied concentrations of Mg/Zn/O compounds in order to not only avoid constructing the complicated interface systems that are observed in the experiments but also take into account the excitonic effects that usually require huge computational resources. From the calculated density of states, the Zn states are highly related to the edge of the conduction band minimum and responsible for the width of bandgap. In addition, the contribution of Zn- d states is below expectations as they are located away from the VBM. As for the optical response, an increase in Zn concentration would cause a red-shifted spectrum, on the whole. In contrast, the higher concentration of Mg also triggers the blue-shift of the optical spectrum. In addition, anisotropic properties could be found in the spectrum with consideration of the excitonic effects, whereas there is no apparent difference in optical response based on linear response theory. In addition, the optical features of this work reflect the characteristic peaks of the literature around the absorption onset.

In this paper, the density functional theory accompanied with linear combination of atomic orbitals (LCAO) method is applied to study the atomic and electronic structure of the Ti 3+ and Ti 2+ ions substituted for the host Al atom in orthorhombic Pbnm bulk YAlO 3 crystals. The disordered crystalline structure of YAlO 3 was modelled in a large supercell containing 160 atoms, allowing simulation of a substitutional dopant with a concentration of about 3%. In the case of the Ti 2+ -doped YAlO 3 , compensated F -center (oxygen vacancy with two trapped electrons) is inserted close to the Ti to make the unit cell neutral. Changes of the interatomic distances and angles between the chemical bonds in the defect-containing lattices were analyzed and quantified. The positions of various defect levels in the host band gap were determined.