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2 results on '"Yong-jie ZOU"'

1. Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric

Author

Kai-Yuen Lam, Jung-Sheng Huang, Yong-Jie Zou, Kuan-Wei Lee, and Yeong-Her Wang

Subjects
AlGaAs, pseudomorphic high-electron-mobility transistor (PHEMT), TiO2, flicker noise, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85
Abstract

This study presents the fabrication and improved properties of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium dioxide (LPD-TiO2) as a gate dielectric. Sulfur pretreatment and postoxidation rapid thermal annealing (RTA) were consecutively employed before and after the gate dielectric was deposited to fill dangling bonds and therefore release interface trapped charges. Compared with a benchmark PHEMT, the AlGaAs/InGaAs MOS-PHEMT using LPD-TiO2 exhibited larger gate bias operation, higher breakdown voltage, suppressed subthreshold characteristics, and reduced flicker noise. As a result, the device with proposed process and using LPD-TiO2 as a gate dielectric is promising for high-speed applications that demand little noise at low frequencies.

Published
2016
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2. Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric

Author

Kuan Wei Lee, Yong Jie Zou, Kai Yuen Lam, Yeong-Her Wang, and Jung Sheng Huang

Subjects
Materials science, Gate dielectric, 02 engineering and technology, High-electron-mobility transistor, 01 natural sciences, Noise (electronics), lcsh:Technology, law.invention, Gate oxide, law, 0103 physical sciences, Breakdown voltage, TiO2, General Materials Science, Flicker noise, lcsh:Microscopy, pseudomorphic high-electron-mobility transistor (PHEMT), lcsh:QC120-168.85, 010302 applied physics, AlGaAs, flicker noise, lcsh:QH201-278.5, Subthreshold conduction, business.industry, lcsh:T, Transistor, Electrical engineering, 021001 nanoscience & nanotechnology, lcsh:TA1-2040, Optoelectronics, lcsh:Descriptive and experimental mechanics, lcsh:Electrical engineering. Electronics. Nuclear engineering, 0210 nano-technology, business, lcsh:Engineering (General). Civil engineering (General), lcsh:TK1-9971
Abstract

This study presents the fabrication and improved properties of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium dioxide (LPD-TiO2) as a gate dielectric. Sulfur pretreatment and postoxidation rapid thermal annealing (RTA) were consecutively employed before and after the gate dielectric was deposited to fill dangling bonds and therefore release interface trapped charges. Compared with a benchmark PHEMT, the AlGaAs/InGaAs MOS-PHEMT using LPD-TiO2 exhibited larger gate bias operation, higher breakdown voltage, suppressed subthreshold characteristics, and reduced flicker noise. As a result, the device with proposed process and using LPD-TiO2 as a gate dielectric is promising for high-speed applications that demand little noise at low frequencies.

Published
2016

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