1. In Situ Monitoring of Pulsed Laser Annealing of Eu-Doped Oxide Thin Films
- Author
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Michal Novotný, Jan Remsa, Šárka Havlová, Joris More-Chevalier, Stefan Andrei Irimiciuc, Sergii Chertopalov, Petr Písařík, Lenka Volfová, Přemysl Fitl, Tomáš Kmječ, Martin Vrňata, and Ján Lančok
- Subjects
Technology ,Microscopy ,QC120-168.85 ,in situ monitoring ,lutetium oxide ,QH201-278.5 ,zinc oxide ,titanium oxide ,Engineering (General). Civil engineering (General) ,Article ,TK1-9971 ,pulsed laser deposition ,pulsed laser annealing ,europium ,photoluminescence ,Descriptive and experimental mechanics ,General Materials Science ,Electrical engineering. Electronics. Nuclear engineering ,TA1-2040 - Abstract
Eu3+-doped oxide thin films possess a great potential for several emerging applications in optics, optoelectronics, and sensors. The applications demand maximizing Eu3+ photoluminescence response. Eu-doped ZnO, TiO2, and Lu2O3 thin films were deposited by Pulsed Laser Deposition (PLD). Pulsed UV Laser Annealing (PLA) was utilized to modify the properties of the films. In situ monitoring of the evolution of optical properties (photoluminescence and transmittance) at PLA was realized to optimize efficiently PLA conditions. The changes in optical properties were related to structural, microstructural, and surface properties characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The substantial increase of Eu3+ emission was observed for all annealed materials. PLA induces crystallization of TiO2 and Lu2O3 amorphous matrix, while in the case of already nanocrystalline ZnO, rather surface smoothening0related grains’ coalescence was observed.
- Published
- 2021