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High dielectric constant (k) metal oxides such as hafnium oxide (HfO2) have gained significant interest due to their applications in microelectronics. In order to study and control the surface properties of hafnium oxide, self-assembled monolayers (SAMs) of four different long aliphatic molecules with binding groups of phosphonic acid, carboxylic acid, and catechol were formed and characterized. Surface modification was performed to improve the interface between metal oxide and top deposited materials as well as to create suitable dielectric properties, that is, leakage current and capacitance densities, which are important in organic thin film transistors. Attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, contact angle goniometry, atomic force microscopy (AFM), and simple metal−HfO2−SAM−metal devices were used to characterize the surfaces before and after SAM modification on sol−gel processed hafnium oxide. The alkylphosphonic acid provided the best monolayer formation on sol−gel processed hafnium oxide to generate a well-packed, ultrathin dielectric exhibiting a low leakage current density of 2 × 10−8A/cm2at an applied voltage of −2.0 V and high capacitance density of 0.55 μF/cm2at 10 kHz. Dialkylcatechol showed similar characteristics and the potential for using the catechol SAMs to modify HfO2surfaces. In addition, the integration of this alkylphosphonic acid SAM/hafnium oxide hybrid dielectric into pentacene-based thin film transistors yields low-voltage operation within 1.5 V and improved performance over bare hafnium oxide. [ABSTRACT FROM AUTHOR]