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Your search keyword '"Xiong Ji"' showing total 11 results
Start Over Author "Xiong Ji" Journal key engineering materials
11 results on '"Xiong Ji"'

1. A Compact Infrared Gas Sensor Based on an Asymmetry Gas Cavity

Author

Ming, An Jie, primary, Ren, Yao Hui, additional, Zhang, Yu, additional, Zhang, Le, additional, Zhang, Wen Bo, additional, Tan, Zhen Xin, additional, Ou, Wen, additional, Tan, Qiu Lin, additional, Mao, Hai Yang, additional, Xiong, Ji Jun, additional, and Chen, Da Peng, additional

Published
2015
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6. MEMS Bionic Vector Hydrophone

Author

Zhang, Guo Jun, primary, Xue, Chen Yang, additional, Xiong, Ji Jun, additional, Zhang, Wen Dong, additional, Wang, Xiao Yao, additional, Liu, Lin Xian, additional, and Ge, Xiao Yang, additional

Published
2012
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11. Structures and Dielectric Properties of (Pb, La)(Zr, Ti)O3 Antiferroelectric Thick Films Prepared by Different Sintering Procedures

Author

Geng, Wen Ping, Chou, Xiu Jian, Lv, Yong Bo, Xiong, Ji Jun, and Zhang, Wen Dong

Abstract

(Pb,La)(Zr,Ti)O3 antiferroelectric thick films were prepared on Pt (111)/ Ti/SiO2/Si (100) substrates by a sol-gel process. The effects of single annealing and multistep annealing on the structures and electric properties of the films were investigated. The crystal orientation and structure of the antiferroelectric thick films were studied. The thick films by multistep annealing have higher (100)-preferred orientation than them by single annealing. The surface of the films was more smooth, compact and uniform by single annealing. The antiferroelectric nature of the (Pb,La)(Zr,Ti)O3 antiferroelectric thick films by various sintering procedures was demonstrated by P(polarization)-E(electric field) and C(capactitance)-E(electric field). The temperature dependent of the dielectric constant and loss was measured under the frequency 1, 10, and 100 kHz and comparing with traditional signal annealing, the films have phase transition from antiferroelectric state to paraelectric state by multistep annealing.

Published
2012
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