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Aiming to be applied in silicon gyroscope, a three-order single loop feedforward modulator with three-bit quantizer and local feedback is designed in this paper. Signal band is 200 KHz, sampling rate is 25.6 MHz, OSR is 64. Ideal modulator is then designed and simulated in MATLAB, getting SNR 125dB. Non-ideal factors are also added to ideal model, DWA technology is adopted to restrain the nonlinearity of multi-bit quantizer, getting SNR 104dB. Finally, transistor-level full-difference modulator is designed and simulated in Cadence, fetting SNR 101.3dB.

In this paper a high-order sigma-delta modulator applied in micro-accelerometer is designed. The modulator chooses the distributed feedback structure. And the signal bandwidth is 500Hz, the oversampling ratio is 250 and sampling frequency is 250KHz. By the MATLAB Simulink simulation, when the input signal is 1g, and the signal frequency is 250Hz, the simulation result is that the noise level is-160dBV at the signal frequency in the ideal situation. And when considering the non-ideal factors, the simulation result shows that the noise level at the input accelerated signal is 20dBV higher than the ideal. The overall circuit was implemented under 0.5 um CMOS process and simulated in Cadence Spectre. The final simulation results show that the signal to noise ratio (SNR) is 97.1dB.

In this Paper, a 4th-Order Low-Pass Gm-C Filter is Presented. for the Design of Operational Tranconductance Amplifier(OTA), it Adopts the Techniques of Current Division and Current Cancellation. these Techniques can Help to Achieve a Low Transconductance Value. for the Architecture of the 4th-Order Gm-C Filter, it Consists of Two Biquads. the Two Biquads are Cascade Connected. the Gm-C Low-Pass Filter has been Implemented under 0.5 μm CMOS Process Model. the Final Simulation Results Show the Cutoff Frequency of the Filter is 100Hz and the Stop-Band Attenuation is Larger than 60dB. the Power Consumption is Lower than 1mW and the Total Harmonic Distortion(THD) is -55dB.

In this paper, the design of compensator to stabilize the micromachined accelerometer is considered based on stability analysis, and the determination of relevant parameter is also proposed. In the design of compensator, in order to minimize the noise effect into the system of micromachined accelerometer, the technology of correlated double sampling (CDS) is considered. The compensator is implemented under 0.5 μm CMOS process and simulated in Cadence. The final simulation result shows that the compensator can afford phase of 15°to micromachined accelerometer at least to stabilize the system.

Sigma-delta ADC outperforms the Nyquist ADC in precision and robustness by using oversampling and noise shaping. A fourth-order sigma-delta modulator of input feedforward architecture is designed and simulated in system-level. Input feedforward architecture has advantages of low output swing of integrators and simple structure. Proper circuit parameters are also presented in this paper. The simulation revealed that the modulator achieves 109 dB dynamic range in a signal bandwidth of 1 KHz with a sampling frequency of 250 KHz.

In this paper, LaNi4.7Al0.3 alloy samples were obtained via melting in middle frequency influence fire .In addition, The alloy pellets were milled for absorbing and desorbing Hydrogen ability study, The P-V-T measurement provided us with poisonous effect on the oxidation of LaNi4.7Al0.3.To understand the poisoning mechanism of O2 on LaNi4.7Al0.3, the X-ray photoelectron spectroscopy (XPS) was introduced to analyzed the process of poisoning of LaNi4.7Al0.3 alloy, Which revealed the changes of the valence of the elements of the alloy LaNi4.7Al0.3 poisoned by O2.

In: Eu: Fe: LiNbO3 crystals were firstly grown from a congruent melt according to the Czochralski method, with the various ratios of Li/Nb =0.885, 0.946, 1.051. The new crystal composition and defect structure were analyzed by the UV-Vis spectroscopy. In the two-wave coupling experiments, writing and erasure time, maximum diffraction efficiency, photorefractive sensitivity and dynamic range were measured and calculated. The dependence of the photorefractive properties on the defect structure of In: Eu: Fe: LiNbO3 Crystals were discussed.