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The authors present an experimental study of Cr∕Sc multilayer mirrors optimized for the detection of the nitrogen Kα-emission line (λ=3.16nm) at a grazing incidence around 23°, for electron probe microanalysis applications. The multilayers were deposited onto silicon substrates using a dc magnetron sputtering system. They were characterized with grazing incidence copper Kα x-ray reflectometry and atomic force microscopy, as well as with at-wavelength reflectometry using synchrotron radiation. These various characterization methods pointed out that the interfacial roughness of these multilayers increases drastically with the number of bilayers. Growth parameters were then optimized, and it is shown that the structure and reflectivity of such multilayers can be considerably improved by optimizing the sputter gas pressure during the deposition process. Reflectivity higher than 37% were measured at 22.3° grazing angle for the nitrogen Kα-emission line.

The present article reports a study of current–voltage (J–E) and capacitance–voltage (C–V) measurements on metal–insulator–semiconductor diodes, using SiNx:H as an insulator layer and Si or InP as semiconductors. We have deposited SiNx:H films by distributed electron cyclotron resonance plasma enhanced chemical vapor deposition at floating temperature, with physical properties similar to films prepared at 800 °C by low pressure chemical vapor deposition. Silane and nitrogen were used as the reactive gases. The experimental results show that the resistivity (ρ) and the critical field (EC) are a strong function of the dielectric composition. For films deposited under optimum conditions, ρ was equal to 1016 Ω cm and EC reached 3.65 or 4.5 MV/cm for Al/SiNx:H/Si and Al/SiNx:H/InP diodes, respectively. The dominant mode of electronic conduction appears to be the Poole–Frenkel emission. The postmetallization annealing (PMA) has no significant effect on these bulk properties (ρ, EC and electronic conduction). On...