23 results on '"Aspnes, D. E."'
Search Results
2. Thickness inhomogeneities and growth mechanisms of GaP heteroepitaxy by organometallic chemical vapor deposition
3. Chemical-etch-assisted growth of epitaxial zinc oxide
4. Real-time optical characterization of heteroepitaxy by organometallic chemical vapor deposition
5. Analysis of high-index Si(001) surfaces by reflectance difference spectroscopy
6. Combined beam profile reflectometry, beam profile ellipsometry and ultraviolet-visible spectrophotometry for the characterization of ultrathin oxide-nitride-oxide films on silicon
7. Analytic representations of the dielectric functions of crystalline and amorphous Si and crystalline Ge for very large scale integrated device and structural modeling
8. Optical approaches to determine near‐surface compositions during epitaxy
9. Optical anisotropy of singular and vicinal Si–SiO2 interfaces and H-terminated Si surfaces
10. As capture and the growth of ultrathin InAs layers on InP
11. Closed‐loop control of growth of semiconductor materials and structures by spectroellipsometry
12. Optical anisotropy spectra of GaAs(001) surfaces
13. Real‐time optical diagnostics for epitaxial growth
14. Nondestructive analysis of Hg1−xCdxTe (x=0.00, 0.20, 0.29, and 1.00) by spectroscopic ellipsometry. II. Substrate, oxide, and interface properties
15. Summary Abstract: Nondestructive determination of the microstructure of materials by visible‐near ultraviolet spectroellipsometry and spectrophotometry
16. Nondestructive analysis of Hg1−xCdxTe (x=0.00, 0.20, 0.29, and 1.00) by spectroscopic ellipsometry. I. Chemical oxidation and etching
17. Reflectance–difference spectroscopy of (110) GaAs and InP
18. Reflectance–difference studies of organometallic chemical vapor deposition growth transients on (001) GaAs
19. Summary Abstract: Nondestructive analysis of native oxides and interfaces on Hg1−xCdxTe
20. Surface preparation and characterization by spectroellipsometry: Application to (100)GaAs
21. Raman scattering in GaSb/AlSb strained‐layer lattices
22. Low‐retardance fused‐quartz window for real‐time optical applications in ultrahigh vacuum
23. Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.