1. Highly reliable a-IGZO TFTs on a plastic substrate for flexible AMOLED displays
- Author
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Hajime Yamaguchi, Keiji Sugi, Tomomasa Ueda, Nobuyoshi Saito, Masato Hiramatsu, Arichika Ishida, Tatsunori Sakano, Isao Amemiya, Shintaro Nakano, and Kentaro Miura
- Subjects
Materials science ,Annealing (metallurgy) ,business.industry ,Transistor ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Threshold voltage ,Amorphous solid ,law.invention ,AMOLED ,law ,Thin-film transistor ,Optoelectronics ,Electrical and Electronic Engineering ,Thin film ,business ,Polyimide - Abstract
We have successfully reduced threshold voltage shifts of amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs) on transparent polyimide films against bias-temperature stress below 100 mV, which is equivalent to those on glass substrates. This high reliability was achieved by dense IGZO thin films and annealing temperature below 300 °C. We have reduced bulk defects of IGZO thin films and interface defects between gate insulator and IGZO thin film by optimizing deposition conditions of IGZO thin films and annealing conditions. Furthermore, a 3.0-in. flexible active-matrix organic light-emitting diode was demonstrated with the highly reliable a-IGZO TFT backplane on polyimide film. The polyimide film coating process is compatible with mass-production lines. We believe that flexible organic light-emitting diode displays can be mass produced using a-IGZO TFT backplane on polyimide films.
- Published
- 2012
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