1. Temperature-assisted morphological transition in CuPc thin films
- Author
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Tae Hee Kim, Thi Kim Hang Pham, and Yujeong Bae
- Subjects
Materials science ,Morphology (linguistics) ,Reflection high-energy electron diffraction ,business.industry ,General Physics and Astronomy ,02 engineering and technology ,Substrate (electronics) ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,Organic semiconductor ,Crystallinity ,Optics ,Reflection (mathematics) ,Electron diffraction ,Optoelectronics ,Thin film ,0210 nano-technology ,business - Abstract
Ex-situ and in-situ morphological analyses were performed for Cu-phthalocyanine (CuPc) organic semiconductor films by using atomic force microscopy (AFM) and reflection high-energy electron diffraction (RHEED). The focus was the effects of post-annealing on the structural characteristics of CuPc films grown on MgO(001) layers by using an ultra-high-vacuum thermal evaporator. Sphere-to-nanofibril and 2-D to 3-D morphological transitions were observed with increasing CuPc thickness beyond 3 nm. The surface morphology and the crystallinity were drastically improved after an additional cooling of the post-annealed CuPc films thinner than 3 nm. Our results highlight that molecular orientation and structural ordering can be effectively controlled by using different temperature treatments and a proper combination of material, film thickness, and substrate.
- Published
- 2016
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