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Lead-free (Bi 0.5 Na 0.5)TiO 3 (BNT)-based piezoelectric materials, have a great potential for high-precision actuators' applications. In this work, the high-quality (0.94- x %)(Bi 0.5 Na 0.5)TiO 3 -0.06BaTiO 3 - x %NaNbO 3 (x = 2–10, BNT-6BT- x NN) thin films have been successfully deposited on Pt/TiO 2 /SiO 2 /Si substrates by sol-gel method. An ultra-high poling strain S pol value of 1.7% with a unipolar strain S uni value of 1.47% was reported in the BNT-6BT-6NN thin films. The coexistence of the ferroelectric phase and relaxor state was observed in the compositions of x = 2–8. Furthermore, the BNT-6BT-6NN thin films show more active domain switching compared to other compositions. It is demonstrated that the optimized strain responses in the BNT-6BT-6NN are attributed to a synergistic reaction of active domain switching and reversible electric-field-induced phase transition between the ferroelectric phase and relaxor state. Our systematic study demonstrates that the BNT-6BT- x NN thin films with an improved strain response are promising candidates for the applications of miniaturized actuators. [ABSTRACT FROM AUTHOR]

In this work, Pb 1−3 x /2 La x ZrO 3 (x = 0–0.12) (PLZ- x) antiferroelectric thin films were fabricated on Pt(111)/TiO 2 /SiO 2 /Si substrates using chemical solution method. Smaller cations (La3+) and vacancies were introduced into A-sites of perovskite structure to construct chemical pressure. According to phenomenological theory, chemical pressure can increase the energy barrier between antiferroelectric (AFE) and ferroelectric (FE) phase, and enhance antiferroelectricity of the system. As a result, a large energy storage density (W re) of 23.1 J cm−3 and high efficiency (η) of 73% were obtained in PLZ-0.10 films, while PLZ-0 films displayed lower W re (15.1 J cm−3) and η (56%). More importantly, PLZ-0.10 films exhibited an excellent cycling stability with a variation of ˜2% after 1 × 108 cycles. The results demonstrate that heavily La-doped PbZrO 3 films with high energy storage density, high efficiency and excellent cycling stability can be considered as potential candidates for energy storage applications. [ABSTRACT FROM AUTHOR]